Fault localization using infra-red lock-in thermography for SOI-based advanced microprocessors

Tan, M.C.; Tay, M. Y.; Qiu, Wentao; Phoa, S.L.

doi:10.1109/ipfa.2011.5992753

Cited by 8 publications

(4 citation statements)

References 6 publications

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“…Focus ion beam (FIB) was used to prepare the cross-section at the thermal emission site. A short was observed with metal layer damage and inter layer dielectric (ILD) crack filled with copper [13], as shown in Fig. 7.…”

Section: Lock-in Thermographymentioning

confidence: 92%

“…7. ILD layer crack filled with copper causing the short [13] As mentioned above, another nondestructive die level failure analysis tool is magnetic field imaging technique, which has two major implementations: magnetic current imaging (MCI) for localization of shorts and leakages [14] and space domain reflectometry (SDR) for localization of open defects [15]. In most systems, field produced by alternating current is sent through a lock-in amplifier to reduce noise.…”

Section: Lock-in Thermographymentioning

confidence: 99%

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Advanced fault localization techniques in microelectronics failure analysis

Chen

Yuan

et al. 2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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Failure analysis (FA) plays an important role in semiconductor industry as the process technology and new packaging are continuously improved. Fault localization is a key step to narrow down the area of failed part and isolate the defective areas, which is prior to destructive failure analysis. This paper will cover some advanced fault localization techniques and tools in package and die/device level failure analysis. Case studies for those techniques will provide a good understanding and illustrate the applications.

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Section: Lock-in Thermographymentioning

confidence: 92%

Section: Lock-in Thermographymentioning

confidence: 99%

Advanced fault localization techniques in microelectronics failure analysis

Chen

Yuan

et al. 2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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“…Silicon is transparent to wavelengths above 1100 nm. It is therefore possible to detect hot spots using IR sensors, through the backside of DUTs [7]. One of the challenges in IR thermography is compensating for natural emissivity of materials.…”

Section: Light Emission From Above 0 • K Bodiesmentioning

confidence: 99%

“…Infra-Red (IR) thermography has proven to be efficient in detecting small defects in ICs [7]. It has also demonstrated to be efficient, by simulation only, for Trojan identification in [8].…”

Section: Introductionmentioning

confidence: 99%

Thermal Scans for Detecting Hardware Trojans

Cozzi

Galliere

Maurine

2018

Constructive Side-Channel Analysis and Secure Design

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It is well known that companies have been outsourcing their IC production to countries where it is simply not possible to guarantee the integrity of final products. This relocation trend creates a need for methodologies and embedded design solutions to identify counterfeits but also to detect potential Hardware Trojans (HT). Hardware Trojans are tiny pieces of hardware that can be maliciously inserted in designs for several purposes ranging from denial of service, programmed obsolescence etc. They are usually stealthy and characterized by small area and power overheads. Their detection is thus a challenging task. Various solutions have been investigated to detect Hardware Trojans. We focus in this paper on the use of thermal near field scans to that aim. Therefore we first introduce and characterize a low cost, large bandwidth (20 kHz) thermal scanning system with the high detectivity required to detect small Hardware Trojans. Then, we experimentally demonstrate its efficiency on different test cases.

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