Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

Lee, Young Gon; Kang, Chang Goo; Jung, Uk Jin; Kim, Jin Ju; Hwang, Hyunsang; Chung, Hyun‐Jong; Seo, Sunae; Choi, Rino

doi:10.1063/1.3588033

Cited by 127 publications

(117 citation statements)

References 22 publications

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“…The graphene corrugations observed by a novel combined SEM/AFM/STM technique are suggested to be attributed to the partial conformation of the graphene to the SiO 2 , not to the intrinsic corrugations of graphene [316]. Besides, species like H 2 O may be trapped at the graphene/SiO 2 interface [317,318]. Water drainage between graphene and substrate also plays a significant role in the formation of wrinkles [319].…”

Section: Disorders In Graphene Structurementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

487

187

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Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.

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Section: Disorders In Graphene Structurementioning

confidence: 99%

Structure of graphene and its disorders: a review

Gao

Lee

et al. 2018

Science and Technology of Advanced Materials

487

187

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show abstract

“…It was shown that the large hysteresis in the gate characterization curves of graphene FETs (GFETs) can be applied for memory device operation 23 . It was also demonstrated that this hysteresis arises due to trapped charge in the oxide dielectric layer 24 . However, the relatively slow dynamics and poor controllability of the trap density in these graphene memory devices require further improvement for realistic applications.…”

mentioning

confidence: 98%

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

et al. 2013

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Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

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“…However, several papers on hysteresis have reported time constants ranging from μsec to a few hundred seconds [14,26,27], indicating that many different physical mechanisms in addition to charge trapping are associated with the hysteretic I-V curves. The I-V curve shown in Fig.…”

Section: Hysteretic Device Characteristicsmentioning

confidence: 99%

“…With a limited understanding of the sources causing hysteresis, it is not easy to find a test method to measure intrinsic properties. Thus, conventional I-V measurements used for graphene devices showing hysteretic behaviors inherently include very significant errors [14].…”

Section: Device Structuresmentioning

confidence: 99%

“…However, the zero bandgap of graphene limits applications that need a high on-off ratio and rectification [9]. Several methods that have been investigated to create a bandgap, such as a bilayer stack of graphene [10,11], doping [12], and nano ribbon structure [13] are known to compromise mobility; i.e., graphene with a larger bandgap tends to have lower mobility, diluting its benefits [14].…”

Section: Introductionmentioning

confidence: 99%

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Issues with the electrical characterization of graphene devices

Lee¹,

Lee²,

Jung³

et al. 2012

Carbon letters

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Graphene is an attractive material for device applications, but device characteristics are very unstable because the graphene is very sensitive to environmental factors such as charges nearby the graphene, metal contacts, defects, contaminants and other adsorbates. Since the interactions between graphene and environmental factors affect the electrical characteristics of graphene devices, the interpretation of electrical characteristics as simple as current-voltage curves is non-trivial, despite the common practice of using well known electrical characterization methods that have been used in silicon MOSFET. This paper addresses major obstacles in the electrical characterization of graphene devices and offers countermeasures to improve the accuracy of electrical characterization methods.

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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics

Cited by 127 publications

References 22 publications

Structure of graphene and its disorders: a review

Structure of graphene and its disorders: a review

Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Issues with the electrical characterization of graphene devices

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