Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

“…Several advanced types of AlGaN/GaN FET devices have been explored recently. Among of them, the GaN MOS or MIS (metal-insulator-semiconductor) HEMTs has drawn most of the attention [9,14,28,43], so do the MISHEMTs with high-K gate dielectric [17,31,44]. Other new devices with a regrowth of AlGaN layer [41], or a regrowth of GaN drift channel layer [45] have also been reported.…”

“…The basic structure of surface passive layer is illustrated in the Figure 6. Many different insulation materials have been explored as the surface passivation layer for AlGaN/GaN HEMTs, including SiO 2 [93,99], Si 3 N 4 [100], ZrO 2 [94,101], HfO 2 [95,96], Ga 2 O 3 [43,102], AlN [103][104][105][106], Sc 2 O 3 [107], TiO 2 [108], ZnO 2 [109], NiO [110], Ta 2 O5 [111], Al 2 O 3 [112][113][114], AlON [43] and so forth. In addition to the surface passivation, dielectric-free passivation technologies have also been proposed and demonstrated, for example, oxygen plasma oxidization [115,116], ozone oxidization [117], chemical oxidization [118], SiH 4 treatment [119] and so forth.…”

“…AlN is found to be a good surface passivation layer which can create a sharp interface and suppress GaN surface oxidation effectively [120]. Recently, Panasonic developed a passivation technology with AlON layer [43]. The AlON layer was deposited by atomic layer deposition (ALD) possessing a better performance with less process damage, less extra fixed charges and less electron traps in comparison with Al 2 O 3 layer.…”

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

“…AlO x N y films can be deposited while using various deposition techniques, among which plasma enhanced atomic layer deposition (PEALD) is a good choice for producing high quality thin films [22]. While a few studies on AlO x N y gate insulators have been reported for enhancement-mode power switching devices [22][23][24], no in-depth study has been reported for a recessed AlGaN/GaN RF-HEMT with a thin AlO x N y gate insulator.…”

Effect of incorporation of nitrogen atoms in Al2O3gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

“…16,17) Recently, it has been reported that GaN-MOSFETs with AlON (Al 2 O 3 with incorporated N atoms) gate dielectrics have lower stress-induced gate leakage density and negative fixed charge density; both of them are beneficial to achieve long-term improvements of the device performance. [16][17][18] This implies that the N atoms in an AlON gate dielectric have a major contribution to the improvement of the reliability. However, the origins of the stress-induced gate leakage and negative fixed charge, and effects of the incorporation of N atoms into Al 2 O 3 are not well understood.…”