Fast switching and long retention Fe-O ReRAM and its switching mechanism

Muraoka, S.; Osano, K.; Kanzawa, Yuchi; Mitani, S.; Fujii, Satoshi; Kawasaki, Koji; Katoh, Y.; Wei, Zhiqiang; Mikawa, Takumi; Arita, Koji; Kawashima, Y.; Azuma, R.; Kawai, K.; Shimakawa, K.; Odagawa, Akihiro; Takagi, Toshihisa

doi:10.1109/iedm.2007.4419063

Cited by 41 publications

(31 citation statements)

References 5 publications

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“…At the same time, much work and research is currently being carried out to speed up the integration of ReRAM devices [2], so if we look at the future, exploring materials that can be used in ReRAM applications is quite relevant. In addition to the Perovskite-type oxides [8], NiO [9] and TiO 2 [10], which are the most widely investigated oxides in the world, many oxides have recently been reported that show monopoplar and/or bipolar ReRAM switching properties [11][12][13][14][15][16][17][18][19][20][21]. Our present investigation of molybdenum oxide is in this same research category.…”

Section: Introductionmentioning

confidence: 88%

Resistance switching properties of molybdenum oxide films

et al. 2012

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Resistive random access memory (ReRAM) properties in which the resistance of the insulating material drastically changes by voltage application have recently attracted much attention. In this work, molybdenum oxide prepared by thermal oxidation of Mo films was studied to investigate its potential as a material exhibiting ReRAM switching. The samples oxidized between 400 and 600 o C were composed of MoO 3 and were switchable. Current-to-voltage curves, which were measured in air at room temperature by using a Pt-Ir probe as the top electrode, indicated the yielding of both the monopolar and bipolar switching properties. The resistance on-off ratio was between 10 and 10 2 .

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Section: Introductionmentioning

confidence: 88%

Resistance switching properties of molybdenum oxide films

et al. 2012

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“…The current-voltage (I-V) curve exhibits hysteresis that can be exploited in nonvolatile ReRAMs. Since an early report of a Perovskite-type oxide, 7 various materials including binary oxides [8][9][10][11][12][13] and solid electrolytes [14][15][16][17][18][19][20][21][22][23][24] have been reported on this switching operation. The pristine state is typically HRS.…”

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confidence: 99%

Filament formation and erasure in molybdenum oxide during resistive switching cycles

Kudo

Arita

Ohno

et al. 2014

Applied Physics Letters

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In-situ filament observations were carried out on the Cu/MoOx/TiN resistive random access memory (ReRAM) by using transmission electron microscopy. Multiple positive and negative I-V cycles were investigated. Clear set-reset bipolar switch corresponding to the characteristics of conventional ReRAM devices was recognized. Filament grew from TiN to Cu in the set cycle and shrank from TiN to Cu in the reset cycle. However, there was no clear contrast change in the image at the switching moment, and thus, switching is thought to occur in a local region of the filament. When the current was large at reset, the filament shrank much, and its position tended to change.

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“…The redox (reduction and oxidation) reaction was firstly evidenced optically in the Fe-O based ReRAM [26]. Raman microspectroscopy on the lateral device and 4-electrode transport measurements revealed that the resistance switching was explained as a redox reaction between Fe 3 O 4 and Fe 2 O 3 at the interface near the anode.…”

Section: Operation Mechanism and Technical Assessmentmentioning

confidence: 98%

ReRAM technology; challenges and prospects

Akinaga

Shima

2012

IEICE Electron. Express

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Abstract:We review recent progresses in Resistive Random Access Memory (ReRAM) technologies together with difficult challenges and prospects. ReRAM is one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, a brief historical overview of the research is provided. The technological overview is reported with the epoch-making achievements. Second, the current understanding in terms of the operation mechanism is shown followed by the technical assessment, especially the advantages of ReRAM. Finally, we summarize the challenges facing the ReRAM technology and the prospects. Keywords: nonvolatile memories, resistance switching, functional oxides, electrochemical devices, redox reaction Classification: Electron devices, circuits, and systems References

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Fast switching and long retention Fe-O ReRAM and its switching mechanism

Cited by 41 publications

References 5 publications

Resistance switching properties of molybdenum oxide films

Resistance switching properties of molybdenum oxide films

Filament formation and erasure in molybdenum oxide during resistive switching cycles

ReRAM technology; challenges and prospects

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