Fast Pulse Driving of Ferroelectric SBT Capacitors in a Nonvolatile Latch

Abstract

We demonstrate a fast shutdown and resumption of a logic circuit applied a nonvolatile latch having SrBi 2 (Ta,Nb) 2 O 9 (SBT) capacitors without a higher drive voltage than a logic voltage of 1.8 V. By assigning an individual drive circuit of the SBT capacitors to the nonvolatile latch not sharing a drive circuit with multiple nonvolatile latches, the fast shutdown and resumption of a logic circuit were completed in 7.5 ns at a drive voltage of 1.3 V. The fast shutdown and resumption without an addition of a high drive voltage to a logic circuit meets a requirement from power-saving applications of system LSIs fabricated in CMOS technologies at 90-nm and below.

Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes

“…[1][2][3] FeRAMs using oxide ferroelectric films, e. g., ͑Pb, Zr͒TiO 3 and SrBi 2 Ta 2 O 9 , are now in production mainly as system memories. 4 They are sometimes embedded in logic largescale integrated circuits ͑LSIs͒ and mounted, for instance, on wireless cards. Applications in these forms have become increasingly important in the coming ubiquitous networking era.…”

Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

“…Note that NV-latch and NV-FF cells can be realized by connecting capacitive or resistive nonvolatile memory elements to the storage nodes of an inverter loop. [27][28][29] However, there have also not been yet any reports on NVlatch and NV-FF using MTJs with CIMS architecture. NVlatch and NV-FF cells can also be easily configured in the same manner as the present NV-SRAM cell using a pair of MTJs.…”

Overview and Future Challenge of Ferroelectric Random Access Memory Technologies

“…To evaluate the operational speed of the NVFFs, we have integrated the NVFFs into a 0.18 mm CMOS logic with fourlevel metals using SrBi 2 Ta 2 O 9 (SBT) capacitors. 7) Figure 4 shows the transition times of the NVFFs taken to get (a) into and (b) out of the shutdown state as a function of V DD . The transitions for getting into and out of the shutdown period have been completed within 2.5 and 7.5 ns, respectively, at 1.8 V. These transitions are ten times faster than those of the NVFFs using Pb 1Àx Zr x TiO 3 (PZT) capacitors reported thus far.…”