2010
DOI: 10.1109/tcsi.2009.2035418
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Fast, Non-Monte-Carlo Estimation of Transient Performance Variation Due to Device Mismatch

Abstract: Citation: Jones, K., Kim, J. & Horowitz, M. (2010). Fast, non-monte-carlo estimation of transient performance variation due to device mismatch. IEEE Transactions on Circuits and Systems, 57(7), pp. 1746 -1755 . doi: 10.1109 /TCSI.2009 This is the unspecified version of the paper.This version of the publication may differ from the final published version.

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Cited by 25 publications
(4 citation statements)
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“…Since latched comparators are linear time-varying circuits, the following experiments are run using a post-layout periodic-steadystate simulation. The test-bench used for the presented results was inspired by [7] and [10]. Delay, offset, and power consumption are evaluated in a 151-point Monte Carlo simulation for a 11-point temperature variation in a range from −40 o C to 175 o C. The test-bench proposed in [7] is able to put latched comparator as close as possible of its metastable operation.…”
Section: Table 1: Transistor Sizing Of Sa and Dt Comparators (W X L)mentioning
confidence: 99%
See 1 more Smart Citation
“…Since latched comparators are linear time-varying circuits, the following experiments are run using a post-layout periodic-steadystate simulation. The test-bench used for the presented results was inspired by [7] and [10]. Delay, offset, and power consumption are evaluated in a 151-point Monte Carlo simulation for a 11-point temperature variation in a range from −40 o C to 175 o C. The test-bench proposed in [7] is able to put latched comparator as close as possible of its metastable operation.…”
Section: Table 1: Transistor Sizing Of Sa and Dt Comparators (W X L)mentioning
confidence: 99%
“…The test-bench used for the presented results was inspired by [7] and [10]. Delay, offset, and power consumption are evaluated in a 151-point Monte Carlo simulation for a 11-point temperature variation in a range from −40 o C to 175 o C. The test-bench proposed in [7] is able to put latched comparator as close as possible of its metastable operation. In this case it achieves maximum delay for an input differential voltage equal to the comparator offset voltage.…”
Section: Table 1: Transistor Sizing Of Sa and Dt Comparators (W X L)mentioning
confidence: 99%
“…RELATED WORK For logic, the use of RSM techniques in VLSI design for standard cell characterization is not new and its use was originally proposed in the late 80's by [12], [13]. Recently, the use of these regression modeling techniques raised interest again as an effective technique to cope with the explosion on the required process corners to capture the combined impact of local and global process variations [14].…”
Section: Fig 4 Overview Of the Memoryvam Approachmentioning
confidence: 99%
“…Transistor-level mismatch is the primary obstacle to reaching a high yield rate for analog designs in deep submicron technologies. For example, due to an inverse-square-root-law dependence with the transistor area, the mismatch of CMOS devices nearly doubles for each process generation less than 90 nm [Masuda et al 2005;Kim et al 2007]. Since the traditional worst-case-or corner-case-based analysis is either so pessimistic that it sacrifices speed, power, and area, or too expensive for practical full-chip design, statistical approaches thereby become imperative to estimate the analog mismatch and performance variations [Pelgrom et al 1989].…”
Section: Introductionmentioning
confidence: 99%