Far-infrared investigations of the surface modes in CdS thin films

The systematic study of the precursor ratio effect in the Cd–Zn–S quantum dot synthesis

“…ATR spectra of Cd0.9Zn0.1S and Cd0.75Zn0.25S QDs were decomposed into five bands at 182, 212, 248, 262 and 304 cm -1 . These frequencies are in good agreement with characteristic phonon frequencies found in far-infrared absorbance and reflection spectra of bulk CdS with hexagonal structure [40,41]. In the case of Cd0.5Zn0.5S QDs, the maxima of the main band at 264 cm -1 is located exactly in the middle between the transverse mode of cubic ZnS (287 cm -1 ) and hexagonal CdS (248 cm -1 ).…”

Improvement in Sb2Se3 Solar Cell Efficiency through Band Alignment Engineering at the Buffer/Absorber Interface

“…The Raman measurement (Figure S2) also revealed characteristics similar to those of the XRD patterns. The Raman spectra of all the Cd x Zn 1– x S films displayed peaks at 300 and 600 cm –1 , corresponding to the 1LO and 2LO vibration modes of crystalline CdS, respectively. , …”

“…The Raman spectra of all the Cd x Zn 1−x S films displayed peaks at 300 and 600 cm −1 , corresponding to the 1LO and 2LO vibration modes of crystalline CdS, respectively. 29,30 The band alignment at the Cd x Zn 1−x S/Sb 2 Se 3 heterojunction interface was quantitatively measured using XPS, and the valence-band offset (VBO) at the Cd x Zn 1−x S/Sb 2 Se 3 junction can be obtained using the following equation 31,32…”