Far infrared fourier transform spectroscopy of semiconductors

Häller, E. E.

doi:10.1007/bf01201693

Mikrochim Acta

1987

DOI: 10.1007/bf01201693

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Far infrared fourier transform spectroscopy of semiconductors

E. E. Häller

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1992

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References 38 publications

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A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Kang

Zirkle

Schroder

1992

Journal of Applied Physics

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We have demonstrated a stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide (GaAs) using cathodoluminescence (CL), thermally stimulated current spectroscopy (TSC), and low temperature Fourier transform infrared spectroscopy (FTIR). Cathodoluminescence shows a local gettering effect around dislocation cores in bulk semi-insulating GaAs qualitatively. This gettering result was confirmed by low temperature FTIR data, which show absorption features resulting from the transition of electrons from the valence band to copper levels. The energy level of each absorption shoulder corresponds to the various copper levels in GaAs. After gettering, the absorption depth at each shoulder decreases. Thermally stimulated current measurements show changes after copper doping. The characteristic returns to that of uncontaminated GaAs after gettering. On the basis of these qualitative and quantitative data, we conclude that copper was gettered, and we propose a stress gettering mechanism in semi-insulating, copper-contaminated GaAs on the basis of dislocation cores acting as localized gettering sites.

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A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Kang

Zirkle

Schroder

1992

Journal of Applied Physics

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Divacancy-tin related defects in irradiated germanium

Khirunenko

Sosnin

Duvanskii

et al. 2018

Journal of Applied Physics

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A new absorption spectrum has been detected in the region of 770–805 cm−1 following the annealing of low temperature irradiated Sn-doped Ge. The spectrum develops simultaneously with the disappearance of the V2-related absorption band. The new spectra arise both in p- (doping with gallium) and n- (doping with antimony) type samples and are completely identical to the absorption spectrum of the corresponding dopants. The studies have shown that the defects responsible for the registered spectra have hydrogen-like excited states similar to those observed for hydrogen-like group-III acceptors and group-V donors in Ge. The defects are identified as SnV2Ga and SnV2Sb. The formation of the revealed complexes consists of two stages. During the first stage, the defects are created as a result of the direct interaction of SnV2 diffusing upon the annealing with atoms Ga or Sb. The second stage arises, apparently, due to the participation of SnV2 in the formation of intermediate defects that are optically inactive and transform into the revealed defects at annealing temperatures Tann. > 243 K.

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Far infrared fourier transform spectroscopy of semiconductors

Cited by 2 publications

References 38 publications

A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

A stress gettering mechanism in semi-insulating, copper-contaminated gallium arsenide

Divacancy-tin related defects in irradiated germanium

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