Factors and Considerations for Modeling Loss of a GaN-based Inverter

Yang, Zhe; Williford, Paige; Jones, Edward A.; Chen, Jianliang; Wang, Fei; Bala, Sandeep; Xu, Jianzhong

doi:10.1109/tpel.2020.3012958

Cited by 9 publications

(3 citation statements)

References 28 publications

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“…The impact of doubling Kapton can be minimized in the designing step by the appliance of other materials. These constrains should be taken into account in the designing process and global optimization of the converter to achieve the tradeoff between CM current emission, power switching losses, and thermal performance [21].…”

Section: Discussion Of Emc Versus Thermal Performancesmentioning

confidence: 99%

EMI Mitigation of GaN Power Inverter Leg by Local Shielding Techniques

Derkacz

Schanen

Jeannin

et al. 2022

IEEE Trans. Power Electron.

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This article presents local shielding techniques applied to a half-bridge inverter leg with the aim to reduce the common-mode (CM) current noise at converter's dc input. The research study is conducted for 650-V enhancement mode Gallium Nitride power transistor switches. Main contributors of parasitic capacitances referred to the inverter-leg middle point node are identified. Then, shielding solutions are proposed to reduce the CM current emission by these capacitances. Respecting the precautions concerning the isolation of CM currents of the half-bridge inverter leg, the electromagnetic compatibility measurement setup is developed. Experimental step-by-step addition of local shielding copper layers to different contributors of middle point capacitance shows progressive attenuation of CM noise spectra.

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Section: Discussion Of Emc Versus Thermal Performancesmentioning

confidence: 99%

EMI Mitigation of GaN Power Inverter Leg by Local Shielding Techniques

Derkacz

Schanen

Jeannin

et al. 2022

IEEE Trans. Power Electron.

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show abstract

“…It is also important to focus on the passive component issues, parasitic capacitances of the devices, case temperature estimation, and also dynamic analysis of the junction temperature. 138 These considerations are very important while modeling the losses of the GaN-based inverters. Another study emphasizes the reduction of EMI along with the resonance suppression using a sine wave filter.…”

Section: Dc-ac Convertersmentioning

confidence: 99%

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

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The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

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“…In [34], a model is proposed and validated to quantify the losses caused by the dynamic ON-state resistance of GaN. In [35], two models are compared to determine the efficiency and temperature of GaN: a basic one and a detailed one that considers parasitic elements. Finally, Catalano et al propose and experimentally validate an analytical thermal model for thermal vias and heatsinks [36,37].…”

Section: Introductionmentioning

confidence: 99%

Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

et al. 2021

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The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.

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Factors and Considerations for Modeling Loss of a GaN-based Inverter

Cited by 9 publications

References 28 publications

EMI Mitigation of GaN Power Inverter Leg by Local Shielding Techniques

EMI Mitigation of GaN Power Inverter Leg by Local Shielding Techniques

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

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