Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

Lumbreras, David; Vilella, Manel; Zaragoza, Jordi; Berbel, Néstor; Jordà, Josep; Collado, Alfonso

doi:10.3390/en14196287

Cited by 7 publications

(5 citation statements)

References 58 publications

(105 reference statements)

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“…Each GaN e-HEMT has only an external gate resistance of 10 Ω, the deadtime is 60 ns, and their junction temperatures are 90 ºC. The PLECS software calculates the losses according to the thermal datasheet and the equations provided by the manufacturer [42], [43].…”

Section: Simulation Resultsmentioning

confidence: 99%

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Fast-Processing Sigma–Delta Strategies for Three-Phase Wide-Bandgap Power Converters With Common-Mode Voltage Reduction

Lumbreras

Zaragoza

Berbel

et al. 2022

IEEE Trans. Power Electron.

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The electromagnetic compatibility of wide-bandgap (WBG) power converters can be greatly improved using spreadspectrum modulation techniques. This article proposes a family of reduced common-voltage sigma-delta modulations (RCMV-Σ∆) for voltage source converters (VSC) that use gallium nitride (GaN) semiconductors. Specifically, this article proposes three new techniques: two reduced-state sigma-delta modulations (RS-Σ∆1&2) and an active sigma-delta strategy (A-Σ∆). The proposed modulation techniques reduce or eliminate the common-mode voltage (CMV) dv/dt transitions and suppress the noise spikes in the conducted electromagnetic interference (EMI) spectrum. Furthermore, this article proposes the use of fast-processing quantizers for RCMV-Σ∆ techniques as well as for hexagonal sigma-delta (H-Σ∆). These quantizers use a novel calculation methodology that simplifies the implementation of the proposed modulations and considerably reduces their computational cost. The performance and the total harmonic distortion of RCMV-Σ∆ techniques are analysed here using MATLAB/Simulink and PLECS. Experimental results performed on a VSC converter that uses GaN e-HEMTs show how RCMV-Σ∆ techniques considerably improve electromagnetic compatibility and exhibit similar efficiencies and total harmonic distortions (THD) to those of H-Σ∆.

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Section: Simulation Resultsmentioning

confidence: 99%

“…This prototype has been designed to work with power ratings of up to 5 kW. A detailed explanation of the design of the converter, including an analysis of the parasitic inductances, can be found in [43]. On the ac side, there was a three-phase series-connected RL load with R = 45. supplies the GaN converter.…”

Section: Resultsmentioning

confidence: 99%

Fast-Processing Sigma–Delta Strategies for Three-Phase Wide-Bandgap Power Converters With Common-Mode Voltage Reduction

Lumbreras

Zaragoza

Berbel

et al. 2022

IEEE Trans. Power Electron.

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“…Each GaN e-HEMT has only an external gate resistance of 10 Ω, the deadtime is 60 ns, and their junction temperatures are 90 °C. The PLECS software calculates the losses according to the thermal datasheet and the equations provided by the manufacturer (Plexim GmbH, 2019;Lumbreras et al, 2021). Appendix A details the equations and procedure used to obtain the converter losses.…”

Section: Simulation Resultsmentioning

confidence: 99%

“…Table 2.13 shows that SiC exhibits the highest thermal conductivity, while the thermal conductivity of GaN devices is the lowest. The low thermal conductivity of GaN e-HEMTs, combined with their high power density and small size, makes thermal dissipation extremely difficult in GaN-based power converters (Lumbreras et al, 2021). Inadequate thermal management can increase the junction temperature and, thus, reduce efficiency and even cause device destruction.…”

Section: Wide-bandgap Power Convertersmentioning

confidence: 99%

“…Furthermore, working at high switching frequencies improves the quality of the output current but also increases EMI (Han et al, 2017). Finally, the high power density of GaN transistors, combined with their low thermal conductivity and small size, makes thermal dissipation extremely difficult in GaN-based power converters (Lumbreras et al, 2021).…”

Section: Introduction Of This Thesismentioning

confidence: 99%

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Development of an active power filter based on wide-bandgap semiconductors

Lumbreras Carrasco

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Electrical and electronic equipment needs sinusoidal currents and voltages to function properly. Equipment such as computers, household appliances, electric vehicle chargers, and LED lights can distort the grid and worsen grid quality. Distorted electrical grids can cause malfunctions, reduce service life, and decrease the performance of connected equipment. Industry commonly solves these problems using active power filters, which can minimise the harmonics of the grid, eliminate undesirable reactive power, and restore balance to unbalanced power grids. This thesis deals with the design and implementation of an active power filter based on wide-bandgap semiconductors, which have properties that are superior to classical silicon devices. An active power filter’s design must take advantage of these benefits to build converters that are smaller, more efficient, and consume fewer resources. However, wide-bandgap semiconductors also present design challenges. Because the most commonly used active power filters in the industry are based on two-level voltage source converters, the research for this doctoral thesis focuses on this converter topology. Moreover, its main objective is to contribute new modulation techniques that are specially designed to work with wide-bandgap semiconductors. The proposed modulations consider different aspects, such as the computational cost of the algorithms, converter losses, and the electromagnetic distortion generated. First, this thesis presents a hexagonal sigma-delta (H-S¿) modulation based on sigma-delta (S¿) modulation. The properties of this modulation are studied, and the technique is compared with other widely used modulations. The comparison considers efficiency, harmonic distortion, the electromagnetic compatibility of the converter, and the type of wideband semiconductor used. In addition, a fast algorithm is mathematically developed to simplify the presented modulation and reduce its computational cost. Secondly, this thesis presents a family of sigma-delta modulations specially designed to improve electromagnetic compatibility: the reduced common-mode voltage sigma-delta (RCMV-S¿) modulations. These modulations avoid using the vectors that generate the maximum common-mode voltage, which significantly reduces the generated electromagnetic distortion without affecting the performance of the converter and its harmonic distortion. Finally, the proposed modulations are applied in a wide-bandgap power converter working as an active filter. Thus, it is verified that the techniques presented in this thesis will obtain satisfactory results when implemented in commercial active power filters. Els equips elèctrics i electrònics necessiten corrents i tensions sinusoïdals per funcionar correctament. Existeixen equips com els ordinadors, els electrodomèstics, els carregadors de vehicle elèctric o les llums LED, que poden distorsionar la xarxa i empitjorar la qualitat d'aquesta. Les xarxes elèctriques distorsionades poden causar el mal funcionament dels equips que s'hi connecten, reduir la seva vida útil i també empitjorar la seva eficiència. A la industria és habitual utilitzar filtres actius per a solucionar aquests problemes. Els filtres actius permeten minimitzar els harmònics presents a la Δxarxa, eliminar la potència reactiva no desitjada i equilibrar xarxes elèctriques desequilibrades. Aquesta tesi tracta sobre el disseny i la implementació d'un filtre actiu basat en semiconductors de banda ampla. Aquests semiconductors presenten propietats superiors als clàssics dispositius de silici. El disseny d'un filtre actiu ha d'aprofitar aquests avantatges per a construir convertidors més petits, eficients i que consumeixin menys recursos. Tanmateix, els semiconductors de banda ampla també presenten problemes que el disseny ha de solucionar. Els filtres actius més utilitzats en la indústria són els basats en convertidors de font de tensió (voltatge source converters) amb dos nivells. La recerca d'aquesta tesi doctoral està focalitzada en aquesta topologia de convertidor, i el seu principal objectiu és l’aportació de noves tècniques de modulació especialment dissenyades per treballar amb semiconductors de banda ampla. Les modulacions proposades tenen en compte diferents aspectes: el cost computacional dels algoritmes, les pèrdues del convertidor i la distorsió electromagnètica generada. En primer lloc, es presenta una modulació sigma-delta hexagonal (H-__) que es basa en la modulació sigma-delta (ΣΔ). S'estudien les propietats d'aquesta modulació i la tècnica es compara amb altres modulacions àmpliament usades. La comparativa realitzada considera l’eficiència, la distorsió harmònica, la compatibilitat electromagnètica del convertidor i el tipus de semiconductor de banda ampla emprat. Addicionalment, es desenvolupa matemàticament un algoritme ràpid per simplificar la modulació presentada i reduir el seu cost computacional. En segon lloc, es presenta una família de modulacions sigma-delta especialment dissenyades per millorar la compatibilitat electromagnètica: les modulacions sigmadelta amb tensió en mode comú reduïda (RCMV-ΣΔ ). Aquestes modulacions eviten fer servir els vectors que generen la màxima tensió en mode comú. D'aquesta manera es redueix significativament la distorsió electromagnètica generada sense afectar de forma notable al rendiment del convertidor ni a la seva distorsió harmònica. Finalment, les modulacions proposades s'apliquen en un convertidor de potència, basat en semiconductors de banda ampla, que treballa com a filtre actiu. Això es verifica que les tècniques presentades en aquesta tesi poden ser implementades en filtres actius comercials obtenint resultats satisfactoris.

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Thermal management in high-frequency, high-power density, solar PV integrated GaN converter system

Venkatesan

Nagamani

Ilango

2023

Microelectronics Reliability

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Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

Cited by 7 publications

References 58 publications

Fast-Processing Sigma–Delta Strategies for Three-Phase Wide-Bandgap Power Converters With Common-Mode Voltage Reduction

Fast-Processing Sigma–Delta Strategies for Three-Phase Wide-Bandgap Power Converters With Common-Mode Voltage Reduction

Development of an active power filter based on wide-bandgap semiconductors

Thermal management in high-frequency, high-power density, solar PV integrated GaN converter system

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