2023
DOI: 10.1007/s42341-022-00427-3
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Factors Affecting the Performance of HJT Silicon Solar Cells in the Intrinsic and Emitter Layers: A Review

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Cited by 4 publications
(4 citation statements)
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“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double-barrier quantum-well-based tunnel oxide-passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c-Si) wafer. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Silicon solar cells fabricated with p-type silicon wafers are still the working horse in favor of the PV industry. [24] It has an advantage over the n-type silicon solar cells due to the lower cost of silicon wafer.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double-barrier quantum-well-based tunnel oxide-passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c-Si) wafer. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Silicon solar cells fabricated with p-type silicon wafers are still the working horse in favor of the PV industry. [24] It has an advantage over the n-type silicon solar cells due to the lower cost of silicon wafer.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double‐barrier quantum‐well‐based tunnel oxide‐passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c‐Si) wafer. [ 4–23 ]…”
Section: Introductionmentioning
confidence: 99%
“…8 The sintering temperature of HJT paste can be effectively reduced by incorporating silver nanoparticles. 9 The production of nanosilver particles poses technical challenges such as low preparation efficiency, susceptibility to agglomeration, or requiring high process conditions, while the preparation conditions for submicron and micron silver powders are relatively straightforward. 10 In the specific preparation process of silver powder, the mixing of the reaction solution significantly impacts the consistency and process stability across different batches in quantity production.…”
Section: Introductionmentioning
confidence: 99%
“…Traditional passivated emitter and rear cells and newer Topcon cells utilize high-temperature sintering processes (approximately 500 °C), employing micron/submicron silver powder as a filler in conductive paste. , In contrast, the silver paste used in a newer heterojunction with intrinsic thin-layer (HJT) cells undergoes low-temperature sintering (below 250 °C) . The sintering temperature of HJT paste can be effectively reduced by incorporating silver nanoparticles . The production of nanosilver particles poses technical challenges such as low preparation efficiency, susceptibility to agglomeration, or requiring high process conditions, while the preparation conditions for submicron and micron silver powders are relatively straightforward .…”
Section: Introductionmentioning
confidence: 99%