2023
DOI: 10.1007/s42341-023-00433-z
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A Review on p-Type Tunnel Oxide Passivated Contact (TOPCon) Solar Cell

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Cited by 6 publications
(2 citation statements)
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“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double-barrier quantum-well-based tunnel oxide-passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c-Si) wafer. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Silicon solar cells fabricated with p-type silicon wafers are still the working horse in favor of the PV industry. [24] It has an advantage over the n-type silicon solar cells due to the lower cost of silicon wafer.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double-barrier quantum-well-based tunnel oxide-passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c-Si) wafer. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] Silicon solar cells fabricated with p-type silicon wafers are still the working horse in favor of the PV industry. [24] It has an advantage over the n-type silicon solar cells due to the lower cost of silicon wafer.…”
Section: Introductionmentioning
confidence: 99%
“…In recent years, solar cells of high efficiency having different specialties such as rear emitter silicon heterojunction, carrier selective contact based on transition metal oxides, double‐barrier quantum‐well‐based tunnel oxide‐passivated contacts, passivated emitter and rear local contact (PERL), passivated emitter and rear contact (PERC), interdigitated back contact, and heterojunction with intrinsic thin layer have emerged, starting with monocrystalline silicon (c‐Si) wafer. [ 4–23 ]…”
Section: Introductionmentioning
confidence: 99%