Facile, one step synthesis of non-toxic kesterite Cu2ZnSnS4 nanoflakes thin film by chemical bath deposition for solar cell application

Huse, Nanasaheb P.; Dive, Avinash S.; Mahajan, Sandip; Sharma, Ramphal

doi:10.1007/s10854-018-8534-1

Cited by 9 publications

(4 citation statements)

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“…Furthermore, BaS and Cu 2 SnS 3 secondary phases could also be resolved by Raman spectroscopy. 33,34 Fig. 2 shows the Raman spectra of Cu 2 Ba x SnS 4 ( x = 0.2, 0.4, 0.6, 0.8, and 1 M) and Fe-doped Cu 2 Ba 0.9 Fe 0.1 SnS 4 nanoparticles.…”

Section: Resultsmentioning

confidence: 99%

P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

Banu,

Henry,

Sivakumar

et al. 2023

New J. Chem.

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Section: Resultsmentioning

confidence: 99%

P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

Banu,

Henry,

Sivakumar

et al. 2023

New J. Chem.

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“…Similar types of results were reported for Cd 0.5 Fe 0.5 Se thin films deposited on various substrates. 23 The average crystallite size was estimated by using Scherer's formula 24 λ β θ = D 0.9 cos…”

Section: Resultsmentioning

confidence: 99%

“…The average crystallite size was estimated by using Scherer’s formula where β is the full width at half-maximum, λ is the wavelength of the X-ray source, and θ is the Bragg angle. The microstrain can be calculated from the following relation The dislocation density of the prepared films can be calculated from the following relation Lattice parameter for the tetragonal CZTSe system can be calculated by the following formula and cell volume can be calculated by The calculated crystallite size, dislocation density, microstrain, and lattice parameter values are tabulated in Table .…”

Section: Resultsmentioning

confidence: 99%

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

2019

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This work describes the photoelectrochemical (PEC) performance of Ag 2 ZnSnSe 4 (AZTSe) thin films prepared on various conductive substrates such as Al, Cu, Ag, and conventional glass by a thermal evaporation method. The X-ray diffraction analysis confirms that the deposited films are the pure tetragonal structure of AZTSe. The scanning electron microscope (SEM) images show polygonal-shaped and spherical-rich particles, which are uniformly distributed over the substrates and are densely packed. By comparing the SEM images, the average particle size of Ag/AZTSe film seems to be higher than that of the other films. The energy-dispersive X-ray analysis is witnessed for nearly stoichiometric values for the films. The optical absorption coefficient of AZTSe thin films is found to be about 10 4 cm −1 and its band gap is found in the range of 1.54−2.15 eV. The Mott−Schottky plot shows n-type conductivity for all of the films. The J−V plot confirms the photoactivity for all of the films. Among the films, the Ag/AZTSe film shows higher power conversion efficiency of about 0.32%. However, further investigation is needed to optimize the thickness of the conductive layer for improving the efficiency of photoelectrochemical cell in comparison to that of the industrially established materials.

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“…Still, it has drawbacks such as reproducibility, traces of deposits, masking, and issues with chemicals with varying precipitation rates. 31 Elradaf et al successfully prepared the CuInSnS 4 thin films using a simple spray system with good electrical conductivity, nonlinear optical indices, narrow band gap, and significant absorption coefficient. 32 Moreover, Hameed et al Fabricate the CuInGeSe 4 films and Si/CuInGeSe 4 heterojunction by thermal evaporation.…”

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confidence: 99%

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

El Radaf,

Al-Zahrani

2024

ECS J. Solid State Sci. Technol.

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The present study used chemical deposition to deposit thin copper aluminum tin sulfide (CATS4) layers onto clean glass substrates. X-ray diffraction analysis was utilized to explore the crystalline structure of the CATS4 films, which refers to the CATS4 films having a cubic crystal structure. Energy-dispersive X-ray analysis showed the presence of Cu, Al, Sn, and S peaks in the CATS4 films, and their atomic ratio is close to 1:1:1:4. Spectrophotometric measurements of optical transmittance and reflectance spanning the 400–2500 nm spectral range were performed to describe the optical properties of the CATS4 layers. The CATS4 films demonstrated a direct energy gap transition between 1.42 and 1.31 eV. Further, increasing the layer thickness enhanced the refractive index and Urbach energy of the CATS4 films. The inspected CATS4 films showed better optoelectrical properties with increasing thickness, including improved optical conductivity, optical resistivity, optical carrier concentration, relaxation time, and optical mobility. Increasing the thickness of the CATS4 films increased their nonlinear optical indices. Additionally, the hot probe apparatus verified the p-type semiconducting characteristics of CATS4 films.

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Facile, one step synthesis of non-toxic kesterite Cu2ZnSnS4 nanoflakes thin film by chemical bath deposition for solar cell application

Cited by 9 publications

References 50 publications

P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films

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Facile, one step synthesis of non-toxic kesterite Cu2ZnSnS4 nanoflakes thin film by chemical bath deposition for solar cell application

Cited by 9 publications

References 50 publications

P-type to N-type conversion of Fe-doped Cu2BaSnS4

P-type to N-type conversion of Fe-doped Cu2BaSnS4

Influence of Substrates on the Photoelectrochemical Performances of Ag2ZnSnSe4 Thin Films

Structural, Optical and Optoelectrical Properties of CuAlSnS4 Thin Films

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Product

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P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

P-type to N-type conversion of Fe-doped Cu₂BaSnS₄

Influence of Substrates on the Photoelectrochemical Performances of Ag₂ZnSnSe₄ Thin Films

Structural, Optical and Optoelectrical Properties of CuAlSnS₄ Thin Films