Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing

Schnarrenberger, M.; Zimmermann, Lars; Mitze, T.; Bruns, J.; Petermann, K.

doi:10.1109/group4.2004.1416657

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…Therefore, other solutions for creating optical facets on PICs are being investigated. For instance, the optical facet can be realized using a two-step reactive ion-etch (RIE) process [29], where (i) a first etching step is used to fabricate high optical quality trenches through the SSCs and into the first few μm of the SOI surface and (ii) a coarser deep-etching step is used to create an approximately 80-100 μm deep trench into the SOI substrate to facilitate fiber access and positioning, as shown in Fig. 4.…”

Section: A Inverted Taper-based Solutionsmentioning

confidence: 99%

Coupling strategies for silicon photonics integrated chips [Invited]

Marchetti¹,

Lacava²,

Carroll³

et al. 2019

Photon. Res.

402

206

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Over the last 20 years, silicon photonics has revolutionized the field of integrated optics, providing a novel and powerful platform to build mass-producible optical circuits. One of the most attractive aspects of silicon photonics is its ability to provide extremely small optical components, whose typical dimensions are an order of magnitude smaller than those of optical fiber devices. This dimension difference makes the design of fiberto-chip interfaces challenging and, over the years, has stimulated considerable technical and research efforts in the field. Fiber-to-silicon photonic chip interfaces can be broadly divided into two principle categories: in-plane and out-of-plane couplers. Devices falling into the first category typically offer relatively high coupling efficiency, broad coupling bandwidth (in wavelength), and low polarization dependence but require relatively complex fabrication and assembly procedures that are not directly compatible with wafer-scale testing. Conversely, out-of-plane coupling devices offer lower efficiency, narrower bandwidth, and are usually polarization dependent. However, they are often more compatible with high-volume fabrication and packaging processes and allow for on-wafer access to any part of the optical circuit. In this paper, we review the current state-of-the-art of optical couplers for photonic integrated circuits, aiming to give to the reader a comprehensive and broad view of the field, identifying advantages and disadvantages of each solution. As fiber-to-chip couplers are inherently related to packaging technologies and the co-design of optical packages has become essential, we also review the main solutions currently used to package and assemble optical fibers with silicon-photonic integrated circuits.

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Section: A Inverted Taper-based Solutionsmentioning

confidence: 99%

Coupling strategies for silicon photonics integrated chips [Invited]

Marchetti¹,

Lacava²,

Carroll³

et al. 2019

Photon. Res.

402

206

View full text Add to dashboard Cite

show abstract

“…With the exception of asymmetric GRIN lens and surface gratings and mirrors, coupling methods often require that the coupling structure be precisely positioned relative to the coupling facet. Hence the development of lithographic methods for fabricating waveguide facets in precise register with the coupling structures is an essential step in solving the coupling problem, that has only been addressed by a small number of laboratories to date (42,43). This has been addressed in our lab (42) by the development of a double-etch process in which a 4 µm deep trench with optically smooth vertical sidewalls is formed first.…”

Section: Device Implementationmentioning

confidence: 99%

Silicon Microphotonic Waveguide Technology for Sensing, Spectroscopy and Communications

et al. 2006

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The high index contrast of the silicon-on-insulator waveguide system gives the optical device designer a new ability to manipulate light at the nanometer scale, tailor the interaction of light with the local environment, and reduce overall device size. This paper describes some of the unique features of the Si microphotonic waveguide system, and some of the resulting applications and challenges encountered in working with this platform. The work of our group in addressing some of the more promising application in sensing, spectroscopy and communications is reviewed, along with our solutions to challenges encountered in making devices on the Si waveguide platform.

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“…Several novel approaches for high efficiency coupling into submicron waveguides have been investigated. 6 We demonstrated a new method to prepare the end-facets of the SOI waveguides using femtosecond laser scoring. 7…”

Section: Introductionmentioning

confidence: 99%

Raman Scattering and Gain in Silicon-on-Insulator Nanowire Waveguides

Mahdi

Meister

Al-Saadi

et al. 2012

J. Nonlinear Optic. Phys. Mat.

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Raman scattering in air-covered and SiO 2 -covered Silicon-on-insulator waveguides of 1.25 cm length, 220 nm height and two widths of 2 µm or 0.45 µm was investigated. A continuous wave (CW) Raman fiber laser at 1454.8 nm with linewidth of <0.1 nm was used as a pump source. The coupling efficiency was estimated to be around 10% for one end facet. Spontaneous Raman shift of 521 cm −1 (1574.2 THz) scattering was observed at 1573.8 nm for SOI waveguides in air and 1574.2 nm for waveguides covered with SiO 2 at pump power of <1.5 mW inside both waveguides of 2 and 0.45 µm. Anti-Stokes scattering was observed at 1352.8 nm with pump power of 16 mW. The stimulated Raman gain was calculated from spontaneous Raman efficiency. Total Raman on-off gain was determined to be 0.6 dB for waveguide with width of 2 µm and 1 dB for waveguide with width of 0.45 µm.

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Facet preparation of SOI waveguides by etching and cleaving compared to dicing and polishing

Cited by 6 publications

References 5 publications

Coupling strategies for silicon photonics integrated chips [Invited]

Coupling strategies for silicon photonics integrated chips [Invited]

Silicon Microphotonic Waveguide Technology for Sensing, Spectroscopy and Communications

Raman Scattering and Gain in Silicon-on-Insulator Nanowire Waveguides

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