“…From these results, it is expected that the size fluctuation of highly dense InAs dots is suppressed for the large InAs coverage. In case of the uniform formation of InAs dots on the GaAs layer, stable facets of f1 1 0g and f1 3 6g planes were observed on the side wall of the dots and induced a self-size limiting effect, revealing saturation of the dot size [3,9]. This self-size limiting is one of important effects to reduce the size fluctuation.…”