Facet Formation of Uniform InAs Quantum Dots by Molecular Beam Epitaxy

Self-assembled InAs quantum dots on GaSb/GaAs(0 0 1) layers by molecular beam epitaxy

“…From these results, it is expected that the size fluctuation of highly dense InAs dots is suppressed for the large InAs coverage. In case of the uniform formation of InAs dots on the GaAs layer, stable facets of f1 1 0g and f1 3 6g planes were observed on the side wall of the dots and induced a self-size limiting effect, revealing saturation of the dot size [3,9]. This self-size limiting is one of important effects to reduce the size fluctuation.…”

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

“…This suggests that the system is far from equilibrium during InAs growth even at an extremely slow growth rate employed in the present work. In a recent RHEED work, it has been reported that deposition of InAs more than 2.3 ML leads to four-fold RHEED streaks in [1 1 0] azimuth, which is characteristic of cation-stabilized surface [20]. The wetting layer rich in In may be a source of In atoms which contribute to the swelling of the SK dots during the growth interruption.…”

Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate

“…When growth rate was lowered, size fluctuation decreased. This is due to the self size limitation effect by the appearance of the crystal facet [8,9] as can be seen from the Fig. 1(b), and this crystal facet is thought to be a [1 3 6] facet.…”

“…Several studies have examined improvement of the uniformity of QDs. Nishi et al [7] achieved remarkable size uniformity by GSMBE; Yamaguchi et al [8,9] attempted to solve this problem by self size-limiting and Nakamura et al [10] formed QDs on an artificial nano-hole array.…”