Growth temperature and InAs supply dependences of InAs quantum dots on InP (0 0 1) substrate

Okawa, Tatsuya; Yamauchi, Yusuke; Yamamoto, Junji; Shimomura, Koichiro

doi:10.1016/j.jcrysgro.2006.10.075

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Selective Area Growth/double-cap Procedures3

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Cited by 12 publications

(8 citation statements)

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“…The composition of the GaInAs layer was changed layer by layer, as explained in Section 3. The InAs QDs and InP FCL were grown at 540 1C and 15 Torr [9]. The growth rate of QDs was 0.013 ML/s and the source supply time was 35 s, then the InP FCL was grown.…”

Section: Growth Of Inas Qds Using Selective Movpe and Double-cap Procmentioning

confidence: 99%

Selective MOVPE growth of InAs QDs using double-cap procedure

Kawashima¹,

Kobie²,

Suzuki³

et al. 2011

Journal of Crystal Growth

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Section: Growth Of Inas Qds Using Selective Movpe and Double-cap Procmentioning

confidence: 99%

Selective MOVPE growth of InAs QDs using double-cap procedure

Kawashima¹,

Kobie²,

Suzuki³

et al. 2011

Journal of Crystal Growth

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“…The composition of the GaInAs layer was changed layer by layer. The InAs QDs and InP FCL were grown at 540 °C and 15 Torr [14]. The growth rate of QDs was 0.013 ML/s and the sources supply time was 35 s, then the InP FCL was grown.…”

Section: Contributedmentioning

confidence: 99%

InAs/InP QDs grown by selective MOVPE growth using double‐cap procedure for broadband LED improved p‐cladding layer

Iwane

Kawashima

Hirooka

et al. 2011

Phys. Status Solidi C

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More than 400nm broadband luminescence was obtained from 3 layered InAs/InP QDs array waveguides. InAs QDs were grown by Stranski‐Krastanov grown mode using selective MOVPE growth and double cap procedure. The selective MOVPE was performed using 16 stripe mask array with a wide mask at one side of the array. The heights of the QDs were controlled vertically by changing the first‐cap layer thickness during the double‐cap procedure. Furthermore, we have tried to control the emission energy of QDs by changing the Ga composition of GaxIn1‐xAs buffer layer under the QDs. By using these techniques, we have fabricated the broadband emission devices. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…First, 110-nm-thick n-InP and 1.4-nm-thick Ga 0.47 In 0.53 As layers were grown on (1 0 0) orientated n-InP substrate at a temperature of 640 1C and a pressure of 100 Torr. The InAs QDs were grown at a temperature of 540 1C and a pressure of 15 Torr [12]. The growth rate of the QDs was 0.013 ML/s, and the source supply time was 35 s. In addition, growth interruptions of 60 s occurred during supply of tertiarybutyl-arsine after the growth of QDs.…”

Section: Selective Area Growth Using the Double-cap Proceduresmentioning

confidence: 99%