Wideband wavelength electroluminescence from InAs/InP QDs using double-cap procedure by MOVPE selective area growth

Selective MOVPE growth of InAs QDs using double-cap procedure

“…Layer by layer control of the multi stacked QD energy was achieved by changing the height of the QDs using the double-cap procedure, and the strain energy in the QDs was varied by compositional change of the GaInAs buffer layer under the QDs. A spectrum width of more than 400 nm was obtained from this LED device [4,5]; however, the output power from the QDs on the high tensile strain buffer layer was very weak and the spectrum width was not as broad as expected. To overcome this problem, the height of the QDs was changed and the Ga content in the GaInAs layer was limited to 0.4770.1 to decrease the reduction emission intensity with the large strain buffer layer, and a broader spectrum width was obtained.…”

“…Fig. 6(a) shows the PL spectrum for QDs from arrays #1 and #16 from the previous studies [4,5], and (b) shows the PL spectrum for arrays #1, #8 and #16 from this work. The FCL thickness of Ga 0.47 In 0.53 As was 3 nm in the previous work and 2.5 nm in this work; therefore, the peak wavelength was blue-shifted due to the reduction of the QD height.…”

“…In the previous work, 3 QD layer LED devices were fabricated with respective FCL thicknesses and Ga contents in the GaInAs buffer layer [4,5]; the 1st QD layer were 3 nm and 0.47, the 2nd QD layer was 1.5 nm and 0.7, and the 3rd QD layer was 4.5 nm and 0.3, respectively. A spectrum width of more than 400 nm was obtained under the continuous wave (CW) electric current injection.…”

“…We have previously reported InAs/InP QD broadband light emitting diodes (LEDs) grown by selective metalorganic vapor phase epitaxy (MOVPE) using the double-cap procedure [3][4][5]. To obtain in-plane energy level control of QDs, selective MOVPE growth was performed using an asymmetric array waveguide pattern [6][7][8].…”

InAs/InP QDs grown by selective MOVPE growth using double‐cap procedure for broadband LED improved p‐cladding layer

“…Self-assembled semiconductor quantum dots (QDs) [1,2] are promising material to realize such energy level control, because three-dimensional control of the energy level is possible. We have previously reported InAs/ InP QDs broadband light emitting diodes (LEDs) grown by selective metal organic vapor phase epitaxy (MOVPE) using the double-cap procedure [3][4][5][6]. To obtain in-plane energy level control of QDs, selective MOVPE growth [7] was performed using an asymmetric array waveguide pattern [8][9][10].…”