2013
DOI: 10.1016/j.mee.2013.02.106
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Fabrication of sub 20-nm wide grooves in a quartz mold by space narrowing dry etching

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Cited by 5 publications
(4 citation statements)
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“…By combining dry etching with advanced mask fabrication techniques, researchers have also produced 2D and 3D microstructure arrays on various mold materials. 2D structures, such as microgrooves [31], cylindrical arrays [32], and gratings [33] with vertical walls, have been fabricated by lithography and dry etching processes. To obtain 3D structures, researchers have also investigated novel methods by which to first produce 3D masks and then transfer them to the substrates via the dry etching process.…”
Section: Wet Etchingmentioning
confidence: 99%
“…By combining dry etching with advanced mask fabrication techniques, researchers have also produced 2D and 3D microstructure arrays on various mold materials. 2D structures, such as microgrooves [31], cylindrical arrays [32], and gratings [33] with vertical walls, have been fabricated by lithography and dry etching processes. To obtain 3D structures, researchers have also investigated novel methods by which to first produce 3D masks and then transfer them to the substrates via the dry etching process.…”
Section: Wet Etchingmentioning
confidence: 99%
“…The major etchant gas CHF 3 supplies both the reactive etching species and the fluorocarbon (C x F y ) surface passivation layer-forming species. 37 To optimize the process, we systematically vary the radio frequency (RF) power, chamber pressure, and ratios of the etch gases (CHF 3 : O 2 : Ar) (Table S1 †). Our optimized etching conditions (Table S2 †) result in a high single-crystal TiO 2 etch rate of ∼40 nm min −1 at a sufficient etch selectivity of ∼14 : 1 over the Cr mask, which enables the formation of TiO 2 nanocylinders with vertical sidewalls (∼90°; Fig.…”
Section: Trifluoromethane (Chf 3 )-Based Plasma Etching Of Singlecrys...mentioning
confidence: 99%
“…Lausecker et al reported the pattern transfer onto silicon substrates with a silicon nitride (SiN x ) layer showing a much higher etching durability than an imprint resist. 8) Cr, 9) CrN, 10) and Cr=Ta 11) with high etching durability have been widely used for dry etching. The critical issue of metal contamination, which degrades the properties of semiconductor devices, [12][13][14] should be considered.…”
Section: Introductionmentioning
confidence: 99%