Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Yoshida, Shinya; Kojima, Akira; Ikegami, Naokatsu; Tanaka, Shuji; Koshida, Nobuyoshi; Esashi, Masayoshi

doi:10.1541/ieejsmas.134.146

Cited by 5 publications

(5 citation statements)

References 14 publications

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“…The other nc-Si electron emitter array, called a Pierce-type, on the driving LSI is shown in Figure 17 [ 20 ]. The emitter array consists of 100 × 100 hemispherical emitters formed by isotropic wet etching of Si.…”

Section: Stacked Integration Using Through-si Viasmentioning

confidence: 99%

Stacked Integration of MEMS on LSI

Esashi

Tanaka

2016

Micromachines

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Two stacked integration methods have been developed to enable advanced microsystems of microelectromechanical systems (MEMS) on large scale integration (LSI). One is a wafer level transfer of MEMS fabricated on a carrier wafer to a LSI wafer. The other is the use of electrical interconnections using through-Si vias from the structure of a MEMS wafer on a LSI wafer. The wafer level transfer methods are categorized to film transfer, device transfer connectivity last, and immediate connectivity at device transfer. Applications of these transfer methods are film bulk acoustic resonator (FBAR) on LSI, lead zirconate titanate (Pb(Zr,Ti)O3) (PZT) MEMS switch on LSI, and surface acoustic wave (SAW) resonators on LSI using respective methods. A selective transfer process was developed for multiple SAW filters on LSI. Tactile sensors and active matrix electron emitters for massive parallel electron beam lithography were developed using the through-Si vias.

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Section: Stacked Integration Using Through-si Viasmentioning

confidence: 99%

Stacked Integration of MEMS on LSI

Esashi

Tanaka

2016

Micromachines

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“…A Pierce electron gun nc-Si emitter array is also being prototyped. Each emitter covers a larger emission area to accommodate higher beamlet currents and is concave in shape to independently converge electron beamlets without the use of a condenser lens 36,37 .…”

Section: Prototype Nc-si Emitter Array and Emission Characteristics Smentioning

confidence: 99%

Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays

et al. 2015

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Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices. While mask-less/direct-write electron beam (EB) lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond, it remains difficult to achieve an appropriate level of throughput. Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed. However, a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array. This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write (MPEBDW) lithography. The emitter array used in our study includes nanocrystalline-Si (nc-Si) ballistic electron emitters. Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons. The transport mechanism allows one to quickly turn electron beamlets on or off. The emitter array is a micro-electro-mechanical system (MEMS) that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor (CMOS) large-scale integration (LSI) system that controls each emitter individually. The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off. Each emitted beamlet (10 Â 10 μm 2) is converged to 10 Â 10 nm 2 on a target via the reduction electron optic system under development. This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array. We examine beamlets and their electron emission characteristics via a 1:1 exposure test.

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“…Furthermore, it can be miniaturized via modern micro-fabrication techniques. All these advantages make it promising in the realization of a high-performance vacuum electron source [1][2][3][4][5][6] as well as other novel applications such as flat panel field emission display [7][8][9], parallel electron beam lithography [10,11] and flat panel X-ray source [12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Cold Cathodes with Two-Dimensional van der Waals Materials

Chen,

2023

Nanomaterials

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Two-dimensional van der Waals materials could be used as electron emitters alone or stacked in a heterostructure. Many significant phenomena of two-dimensional van der Waals field emitters have been observed and predicted since the landmark discovery of graphene. Due to the wide variety of heterostructures that integrate an atomic monolayer or multilayers with insulator nanofilms or metallic cathodes by van der Waals force, the diversity of van der Waals materials is large to be chosen from, which are appealing for further investigation. Until now, increasing the efficiency, stability, and uniformity in electron emission of cold cathodes with two-dimensional materials is still of interest in research. Some novel behaviors in electron emission, such as coherence and directionality, have been revealed by the theoretical study down to the atomic scale and could lead to innovative applications. Although intensive emission in the direction normal to two-dimensional emitters has been observed in experiments, the theoretical mechanism is still incomplete. In this paper, we will review some late progresses related to the cold cathodes with two-dimensional van der Waals materials, both in experiments and in the theoretical study, emphasizing the phenomena which are absent in the conventional cold cathodes. The review will cover the fabrication of several kinds of emitter structures for field emission applications, the state of the art of their field emission properties and the existing field emission model. In the end, some perspectives on their future research trend will also be given.

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Fabrication of Pierce-Type Nanocrystalline Si Electron-Emitter Array for Massively Parallel Electron Beam Lithography

Cited by 5 publications

References 14 publications

Stacked Integration of MEMS on LSI

Stacked Integration of MEMS on LSI

Development of massively parallel electron beam direct write lithography using active-matrix nanocrystalline-silicon electron emitter arrays

Cold Cathodes with Two-Dimensional van der Waals Materials

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