The laser induced pressure wave propagation method is often used to measure the space charge distribution in solid insulators. This method gives rise to many advantages, so it is widely used both in industrial and in research laboratories. However, it is necessary to take some precautions before treating induced signals in order to minimize calculation errors. Here, some quantitative information about the effects of approximations and the technical problems arising from this method used to study cable insulators are presented. Data from semiconductor/polyethylene samples have been obtained. Some recommendations defining an appropriate experimental protocol of space charge measurement in high voltage cable insulators are given.

Nanoscale lithographic technologies have been intensively studied for the development of the next generation of semiconductor manufacturing practices. While mask-less/direct-write electron beam (EB) lithography methods serve as a candidate for the upcoming 10-nm node approaches and beyond, it remains difficult to achieve an appropriate level of throughput. Several innovative features of the multiple EB system that involve the use of a thermionic source have been proposed. However, a blanking array mechanism is required for the individual control of multiple beamlets whereby each beamlet is deflected onto a blanking object or passed through an array. This paper reviews the recent developments of our application studies on the development of a high-speed massively parallel electron beam direct write (MPEBDW) lithography. The emitter array used in our study includes nanocrystalline-Si (nc-Si) ballistic electron emitters. Electrons are drifted via multiple tunnelling cascade transport and are emitted as hot electrons. The transport mechanism allows one to quickly turn electron beamlets on or off. The emitter array is a micro-electro-mechanical system (MEMS) that is hetero-integrated with a separately fabricated active-matrix-driving complementary metal-oxide semiconductor (CMOS) large-scale integration (LSI) system that controls each emitter individually. The basic function of the LSI was confirmed to receive external writing bitmap data and generate driving signals for turning beamlets on or off. Each emitted beamlet (10 Â 10 μm 2) is converged to 10 Â 10 nm 2 on a target via the reduction electron optic system under development. This paper presents an overview of the system and characteristic evaluations of the nc-Si emitter array. We examine beamlets and their electron emission characteristics via a 1:1 exposure test.

Tilted nanostructure fabrication by electron beam lithography J. Vac. Sci. Technol. B 30, 06F302 (2012); 10.1116/1.4754809Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography A planar nanocrystalline silicon (nc-Si) electron emitter array compatible with an active-matrix largescale integrated (LSI) driving circuit has been developed for massively parallel electron beam directwrite lithography. The electron-emitting part of the device consists of a 50-lm-pitch and 200 Â 200 arrays of nc-Si dots fabricated on a Si substrate, and via-first-processed through-silicon-via (TSV) plugs of poly-Si connected with the dots from behind the substrate. Tapered emitter-array etching and electrochemical-oxidation with subsequent annealing and super-critical rinsing and drying processes significantly enhanced the electron emission current by improving and stabilizing uniformity and reducing the process temperature. When the emitter array was driven, electrons were effectively injected into the nc-Si layer through the TSV plugs and quasiballistically emitted through the gold surface electrode. The nc-Si emitter responded to the input signal within times of 0.1 ls or less. A 1:1 pattern transfer experiment demonstrated that 5 Â 5 subset square patterns selected from the emitter array can be reproduced on an e-beam resist without any distortions or fluctuations, showing that the energy dispersion of the emitted electrons is quite small. The basic concept of electronic aberration correction performed by an active-matrix LSI driving circuit is also discussed.

Abstract. We present a prototype electron emitter array integrated with an active-matrix driving large-scale integrated circuit (LSI) for a high-speed massively parallel direct-write electron-beam (e-beam) system. In addition, we describe the results of a performance evaluation of it as an electron source for massively parallel operations. The electron source is a nanocrystalline Si (nc-Si) ballistic surface electron emitter in which a 1∶1 projection of the e-beam can resolve patterns 30 nm wide. The electron-emitting part of the device consists of an array of nc-Si dots fabricated on an SOI or Si substrate and through silicon via (TSV) plugs connected to the dots from the back of the substrate. The device consists of an aligned joint of TSV plugs with driving pads on the active-matrix LSI. Subject terms: nanocrystalline Si; ballistic electron; electron emitter; massively parallel; electron beam direct write system; MEMS; through silicon via.Paper 12008P

Multifilamentary superconducting Nb 3 Sn wires are widely used for industrial applications. Wires processed by the Bronze Route technique are characterized by a large number of filaments Nb 1−x Sn x , with 0.18 x 0.25, corresponding to a distribution of T c between <10 and 18 K. This distribution is a critical property of the wires and is important for the optimization of the conductors. However, it is not accessible to conventional techniques, due to percolation and/or magnetic shielding effects. In order to determine the T c distribution in the sample, we have carried out specific heat measurements of various Nb 3 Sn multifilamentary wires (including the bronze matrix) in zero field and at 14 T. A deconvolution of the calorimetric data at the superconducting transition by means of a thermodynamical model was used for obtaining the distribution of T c in the whole wire volume. The measurements were extended to Nb 3 Sn wires containing Ti additions, and the results were compared. The present calorimetric method is of primary importance for the complete characterization of Nb 3 Sn wires.