2009
DOI: 10.1016/j.mee.2008.12.095
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Fabrication of metallic oxide nanowires

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Cited by 9 publications
(6 citation statements)
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“…Devices were patterned in a 3-step process via optical and electron beam lithography and ion beam etching, as described previously. 31 The different device characteristics are summarized in Table 1, and SEMs of two devices are shown in the insets of The AC current source could be varied between 250 nA and 1 mA. Other than Joule heating at large AC currents, the changes in the AC current source had no noticeable effect on the measurements.…”
Section: Methodsmentioning
confidence: 99%
“…Devices were patterned in a 3-step process via optical and electron beam lithography and ion beam etching, as described previously. 31 The different device characteristics are summarized in Table 1, and SEMs of two devices are shown in the insets of The AC current source could be varied between 250 nA and 1 mA. Other than Joule heating at large AC currents, the changes in the AC current source had no noticeable effect on the measurements.…”
Section: Methodsmentioning
confidence: 99%
“…An alternative process for the nanogaps would involve using the FOX as etch mask for a subsequent ion beam etch. 20 Using this scheme any electrode can be used including La x Sr 1−x MnO 3 contacts.…”
Section: Methodsmentioning
confidence: 99%
“…In this regard, appreciable progress has already been made by various groups in development of processes for LSMO patterning, etching, and metallization. [53][54][55] With film deposition process control also in place, LSMO-Si device structures for various applications can now be attempted using topdown or bottom-up patterning approaches.…”
Section: Implications For Device Applicationsmentioning
confidence: 99%