2000
DOI: 10.1016/s0924-4247(99)00341-6
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Fabrication of mechanical structures in p-type silicon using electrochemical etching

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Cited by 35 publications
(16 citation statements)
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“…The macro-porous process usually requires low n-doped material and illumination from the backside, which may not be compatible with the IC process. However, some macro-porous etching has been achieved in p-type material (Ohji, 2000), although the process is more difficult to control. Deep reactive ion etching (DRIE), addressed some of the limitations of wet etching, although the process is more expensive.…”
Section: Bulk Micromachiningmentioning
confidence: 99%
“…The macro-porous process usually requires low n-doped material and illumination from the backside, which may not be compatible with the IC process. However, some macro-porous etching has been achieved in p-type material (Ohji, 2000), although the process is more difficult to control. Deep reactive ion etching (DRIE), addressed some of the limitations of wet etching, although the process is more expensive.…”
Section: Bulk Micromachiningmentioning
confidence: 99%
“…The deposition of metallic thin layers/particles is one of the key processes for producing feasible electrochemical devices; it should adhere strongly to the membrane in order to reduce ohmic losses and to support high mechanical stresses produced during the operation [17]. Since our aim was to compare the PS as substrate for both metallic thin film or metallic particle distribution on Si fibrils, both physical and chemical procedures have used: (i) platinum (Pt) thin film has been deposited on PS using Ebeam high vacuum thin film deposition system (NEVA EDV-500A), and respectively (ii) a metallic precursor solution was used to achieve the chemical attachment of particles on nanostructurated Si based supports by simple immersion of the samples for different periods of time, from one hour to five days [18].…”
Section: Metallic Nanoparticle Depositionmentioning
confidence: 99%
“…This process is usually limited to n-type material, but there have been examples of macro-porous silicon in p-type material using an alternative etchannt. [19] Deep reactive ion etching (DRIE), addressed some of the limitations of wet etching, although the process is more expensive. Two main processes are cryogenic [20] and Bosch processes [21].…”
Section: A Bulk Micromachiningmentioning
confidence: 99%