Fabrication of LED based on III–V nitride and its applications

Abstract

Short wavelength LED (TG Purple) based on III‐V nitride semiconductors is established in addition to blue and green. This short wavelength LED is realized by adjusting the “indium” chemical content of the well layer. Light output power of “TG Purple” is high and FWHM is narrow. “TG Purple” is applied to light sources of white LED. Combination of “TG Purple” and various phosphors can generate white light with high luminous intensity and good color rendering. “TG Purple” is also applied to light sources of air‐purifiers. Air‐purifiers have become standard equipments for luxury‐car models. Also, several applications of this system are widely utilized in room air conditioners and refrigerators. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Electrical properties of undoped bulk ZnO substrates

“…The concentration of these traps, on the order of 2 3 10 15 cm ÿ3 according to C-V and C/G-T results, is about 20 times higher in the Tokyo Denpa ZnO compared to the two other materials. 45,46,53 The other electron traps at E c ÿ0.2 eV commonly observed in undoped n-ZnO [1][2][3][4][5] are not detected in conducting Tokyo Denpa ZnO samples. The 0.55-eV electron traps normally created in undoped n-ZnO only upon proton bombardment, intense plasma treatment or rough polishing 45,46 are predominant centers in the Tokyo Denpa material as 0.3-eV traps.…”

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Although the technology of ohmic and Schottky contacts preparation in ZnO is in its infancy, low-resistivity ohmic contacts to n-type material and p-type material have been demonstrated. Schottky diodes on n-ZnO have been plagued by low reproducibility and low thermal stability issues.…”

Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO

“…Reports also showed it may revert to n-type conductivity over a few days at room temperature [16]. Whether or no, in addition to achieving stable and high hole concentrations p-type ZnO, work is also needed to develop highquality ohmic and schottky contacts, which is essential for the realization of high performance ZnO-based optoelectronic devices as well [17][18][19].…”

Optical studies of bulk and homoepitaxial films of III–V nitride semiconductors

“…InGaN-based LEDs have proven to be reliable in applications such as displays, indicator lights, advertisements, traffic signs/signals, and white-light for indoor lighting [1,2]. Laser diodes (LDs) based on the same material system have matured to allow its use for highdensity optical storage application [3].…”