Rapid thermal annealing induced changes on the contact of Ni/Au to N-doped ZnO

Shan, Z.P.; Gu, Shulin; Zhu, Suhua; Liu, W.; Tang, Kai; Chen, H.; Liu, J.G.; Zheng, Youdou

doi:10.1016/j.apsusc.2008.05.118

Cited by 7 publications

(1 citation statement)

References 37 publications

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“…The photobleaching of the as-prepared film due to annealing is assigned to an increase of hetero-polar bond density. Shan et al [138] have observed thermal annealing induced changes in N-doped ZnO thin films. They have observed ohmic behavior after thermally annealing the Ni/Au metal contacts in nitrogen environment and change in nature of charge carriers from p-type to n-type after annealing at 550 °C which has been attributed to the instability nature of the p-type N-doped ZnO or the dissociation of ZnO caused by annealing process in N 2 ambient.…”

Section: Structuralmentioning

confidence: 99%

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

Tripathi

Kaur

Ridhi

et al. 2015

SSP

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The irradiation of nanomaterials with energetic particles has significant effects on the properties of target materials. In addition to the well-known detrimental effects of irradiations, they have also some beneficial effects on the properties of nanomaterials. Irradiation effect can change the morphology of the materials in a controlled manner and tailor their mechanical, structural, optical and electrical properties. Irradiation induced modifications in the properties of nanomaterials can be exploited for many useful applications. With the aim of getting better performance of electronic devices, it is necessary to discuss the irradiation induced changes in the nanomaterials. In order to improve the irradiation hardness of electronic components, it is also crucial to have a fundamental understanding of the impact of the irradiation on the defect states and transport properties of the host material. In the present article, we review some recent advances on the irradiation induced effects on the properties of semiconducting nanomaterials. We have reviewed the effect of different types of irradiations which includes γ-irradiation, electron beam irradiation, laser irradiation, swift heavy ion irradiations, thermal induced, and optical induced irradiations, etc. on the various properties of semiconducting nanomaterials. In addition, the irradiation induced defects are also discussed.

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Section: Structuralmentioning

confidence: 99%

Radiation Induced Effects on Properties of Semiconducting Nanomaterials

Tripathi

Kaur

Ridhi

et al. 2015

SSP

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Fabrication and characterization of ZnO:Sb/n-ZnO homojunctions

et al. 2021

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Antimony doped ZnO layers have been grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates at high temperature (950°C) and low-pressure conditions (50 torr).Nitrous oxide and diethyl-zinc have been used as oxygen and zinc precursors, respectively. The incorporation of antimony has been obtained from the decomposition of triethyl-antimony doping molecules added in the gas phase. Sb concentrations were measured from 8.10 18 to 10 19 at /cm -3 using secondary ion mass spectroscopy. Our results suggest the formation of acceptor dopantdefect complexes, such as the SbZn-2VZn. Low temperature photoluminescence spectra of Sbdoped layers exhibit donor-acceptor pair transitions at 3.253 eV. Unlike Raman spectra of nitrogen doped ZnO layers which show several local vibrational modes related to nitrogen incorporation, these modes which are absent in the antimony-doped ZnO layers. n-ZnO/p-ZnO:Sb homojunction diodes on ZnO substrate have been successfully elaborated. The current-voltage characteristics of the device exhibit a rectifying behaviour with a turn-on voltage of 3V.

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