The structural and optical characterizations of ZnO synthesized using the “bottom-up” growth method

ZnO Metal-Semiconductor-Metal UV Photodetectors on PPC Plastic with Various Metal Contacts

“…The other luminescence peak is the blue-green emission ranged from 452.0 to 510.0 nm as shown in the inset in Figure 9, which is due to the defect related to deep level emission (Tneh et al, 2010). This result is in agreement with Wei et al and Wu et al (Wei et al, 2007;Wu et al, 2007), which is attributed to the transition of electron from defect level of Zn interstitial atoms to top level of the valence band.…”

Effect of thermal annealing on the structural, electrical and optical properties of Al–Ni co-doped ZnO thin films prepared using a sol–gel method

“…As SEM images revealed that the roughness of the NiAl:ZnO films increased with increasing the annealing temperature, the decrease in transmittance of the films at higher annealing temperature may due to the scattering effect from the rough surfaces. Tneh et al [34] reported that surface roughness strongly affects the transmittance of ZnO based thin films. Sengupta et al [35] showed the same trend for the decreasing transmittance of ZnO films with increasing annealing temperature from 400 to 700°C.…”

Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

“…6). The following relation known as the Tauc relationship has been used for determination of E g [29].where B is proportionality constant, n is the power indicating nature of optical transition (2 for indirect bandgap and ½ for direct bandgap materials), ν is photon frequency, and α has been calculated using the following relation [30].…”