Fabrication of high-quality γ-In2Se3 nanostructures using magnetron sputtering

TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

“…This indicates the similarity in mass and bond forces among the two elements of In and Se. The main Raman peaks of pure In-Se films are consistent with other works 27 . The peaks at 103 cm -1 , 154 cm -1 and 307 cm -1 are related to the In-Se phase 29 .…”

“…It indicates that the thermal treatment acts as a tunable role affecting two crystalline phases. The observed (006), ( 207) and (134) peaks were identified as the γ-phase In 2 Se 3 structure 27 . All the diffraction peaks correspond well to the hexagonal defect wurtzite structure 28 .…”

Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

“…Up to now, using this method only, γ-In 2 Se 3 was prepared in the In 2 Se 3 family. ,− In the preparation of γ-In 2 Se 3 nanofilms on n-Si(100) by RF magnetron sputtering, a highly pure In 2 Se 3 ceramic target served as the cathode . The base pressure was evacuated to 1.9 × 10 –4 Pa; then the working gas (99.99% Ar gas) was passed through sputtering chamber at a flow rate of 20 sccm and the pressure of deposition was kept at 0.5 Pa; the sputtering power was set to 80 W; the substrate temperature was at 360 °C; and the distance of the substrate to target was tuned to 5 cm.…”

“…Up to now, high-quality α-, β-, and γ-In 2 Se 3 films are prepared by vapor-phase growing method. In CVD, the growth temperature is varied for different substrates, and the growth temperature of α-In 2 Se 3 is higher than that of β- and γ-In 2 Se 3 ; Se and In 2 O 3 powders are commonly used as precursors. ,, The growth temperature of PVD is similar to that of CVD, but the precursor in PVD is usually In 2 Se 3 or InSe. ,,,,, Using magnetron sputtering, γ-In 2 Se 3 is usually prepared. ,− Using PLD, the preparation of α-, β- and γ-In 2 Se 3 films can be achieved. ,, However, PLD has relatively large impact and damage to the interface of films because of its high pulse energy, compared to MBE which uses thermally evaporated particles to grow. For MBE, the substrate surface, substrate temperature, and flux ratio of Se to In sources heavily affect the α-In 2 Se 3 formation.…”

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica*

“…γ-In 2 Se 3 thin films prepared by magnetron sputtering, source co-evaporation, chemical bath deposition, solid-phase reaction, electrodeposition, and sol-gel technologies are polycrystalline (PC) with inferior electronic and optical quality. [15][16][17] So far, the singlecrystalline (SC) γ-In 2 Se 3 films are only obtained by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) method. However, the MOCVD growth of γ-In 2 Se 3 has to be operated at a temperature higher than 700 K, [18,19] which is incompatible with the microelectronic process required for integrating γ-In 2 Se 3 on patterned circuits.…”