Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In<sub>2</sub>Se<sub>3</sub> thin films on mica*

Yin, Xibo; Shen, Yifan; Xu, Chaofan; He, Jing; Li, Junye; Ji, Haining; Wang, Jianwei; Li, Handong; Zhu, Xiaohong; Niu, Xiaobin; Wang, Zhiming

doi:10.1088/1674-1056/abcf32

Cited by 6 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…If the polycrystalline thin films were annealed at ∼573 K (below the β- to-γ phase transition temperature, 623 K), the single-crystal and single-phase β-In 2 Se 3 films were acquired. Furthermore, the ultrathin α-In 2 Se 3 layers in In 2 Se 3 /(Bi 1– x In x ) 2 Se 3 superlattices grown on mica and single-crystalline γ-In 2 Se 3 films on mica were obtained by MBE. , …”

Section: Strategies For the Preparation Of In2se3 Nanostructures And ...mentioning

confidence: 99%

“…Furthermore, the ultrathin α-In 2 Se 3 layers in In 2 Se 3 /(Bi 1−x In x ) 2 Se 3 superlattices grown on mica and single-crystalline γ-In 2 Se 3 films on mica were obtained by MBE. 55,125 Magnetron Sputtering. Substrate temperature, bias voltage, discharge power, and deposition time have a significant effect on the preparation of thin films by magnetron sputtering.…”

Section: Strategies For the Preparation Of In 2 Se 3 Nanostructures A...mentioning

confidence: 99%

See 1 more Smart Citation

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Niu

et al. 2021

ACS Nano

Self Cite

View full text Add to dashboard Cite

Nanostructured In2Se3 compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) In2Se3 has caused a new upsurge of scientific interest in nanostructured In2Se3 and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of In2Se3 are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the In2Se3 compound family. Recent achievements in the preparation of low-D In2Se3 with controlled phases are discussed in detail. General principles for obtaining pure-phased In2Se3 nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured In2Se3 with different phases are also summarized. Progress and challenges on the applications of In2Se3 nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of In2Se3 materials are presented.

show abstract

Section: Strategies For the Preparation Of In2se3 Nanostructures And ...mentioning

confidence: 99%

Section: Strategies For the Preparation Of In 2 Se 3 Nanostructures A...mentioning

confidence: 99%

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Niu

et al. 2021

ACS Nano

Self Cite

View full text Add to dashboard Cite

show abstract

“…Among metal chalcogenides, indium selenide (In 2 Se 3 ) exhibits high response and superior stability under ambient conditions. It is an III-VI group layered chalcogenide material and has received a lot of attention in the field of solar cells [24][25][26], optoelectronic devices [27][28][29][30][31][32], and phase change memory [33]. In 2 Se 3 shows a tunable thicknessdependent optical bandgap ranging from 1.45 eV to 2.8 eV, making it a promising candidate in photodetection [34].…”

mentioning

confidence: 99%

Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties

Hase

Sharma

Prasad³

et al. 2023

IEEE Sensors J.

View full text Add to dashboard Cite

Metal chalcogenide indium selenide (In2Se3) is attracting increasing research interest for photodetector applications due to its excellent photoresponse and superior stability under ambient conditions. However, the temperature-dependent performance of In2Se3-based photodetectors has rarely been reported. Here, -In2Se3 thin films were prepared at various deposition pressure using the RF magnetron sputtering for photodetector applications. The formation of single-phase -In2Se3 films has been confirmed by the XRD and Raman analysis. Binding energies and elemental composition of -In2Se3 films were examined by XPS analysis. FE-SEM images show that the prepared -In2Se3 films were crack and pore-free, dense, compact, smooth, and have small grains. The optical energy bandgap decreases from 2.2 eV to 1.7 eV with an increase in deposition pressure. Then photoresponse of -In2Se3-based photodetectors was investigated. The photodetector fabricated with -In2Se3 at 5 Pa on ITO-coated interdigital electrode (IDE) exhibited excellent photoresponsivity (2.82 µA/W) and detectivity (7.06x10 7 Jones) with a fast rise of 0.26 s and decay time of 0.32 s. Finally, the temperature-dependent photoresponse of the photodetector fabricated with -In2Se3 at 5 Pa is meticulously investigated. We found that the photodetector properties of a photodetector critically depend on the operating temperature.

show abstract

Application of Transparent Fluorphlogopite Substrate in Flexible Electromagnetic Devices

et al. 2023

View full text Add to dashboard Cite

Figure 11. Atomic structure of synthesized antimonene polygons. a) Schematic diagrams of the atomic structure of β-phase antimonene. b) Atomic force microscopic image of a typical triangular antimonene sheet showing the thickness of 4 nm. The scale bar is 1 mm. c) Low-magnification transmission electron microscopy (TEM) image of a well-shaped antimonene sheet transferred onto a copper grid. The scale bar is 1 um. d) Sb element mapping. Sb content is measured to be 94 wt%. The scale bar is 1 um. e) O element mapping.O is measured to be 4%. The scale bar is 1 um. f ) HRTEM image with inset showing the selected area electron diffraction pattern along the [001] zone axis. The scale bar of the HRTEM image is 2 nm. g) Enlarged image of fewlayer antimonene. The scale bar is 0.5 nm. h) Simulated HRTEM image of few-layer antimonene. The scale bar is 0.5 nm. Reproduced with permission. [86]

show abstract

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In₂Se₃ thin films on mica*

Cited by 6 publications

References 37 publications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties

Application of Transparent Fluorphlogopite Substrate in Flexible Electromagnetic Devices

Contact Info

Product

Resources

About

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In2Se3 thin films on mica*

Cited by 6 publications

References 37 publications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Low-Dimensional In2Se3Compounds: From Material Preparations to Device Applications

Fabrication of ᵞ-In₂Se₃-Based Photodetector Using RF Magnetron Sputtering and Investigations of Its Temperature-Dependent Properties

Application of Transparent Fluorphlogopite Substrate in Flexible Electromagnetic Devices

Contact Info

Product

Resources

About

Monolithic epitaxy and optoelectronic properties of single-crystalline γ-In₂Se₃ thin films on mica*

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications

Low-Dimensional In₂Se₃Compounds: From Material Preparations to Device Applications