TEMPERATURE-DEPENDENT STRUCTURE AND OPTICAL PROPERTIES OF In2Se3 THIN FILMS

Abstract

Chalcogenide-based In2Se3 thin films were deposited by RF magnetron sputtering method at room temperature, and then were annealed at different temperature under nitrogen atmosphere in order to study the effect of annealing temperature on structure and optical. X-ray diffraction analysis show that, the preferred orientation in (110), (006), and (207) plane were observed in XRD result of the film sample annealed at 400℃. The Raman spectrometer result reveals that the main Raman peaks were identified as the γ-phase In2Se3 structure and the peak in the film annealed at 400℃ moves to small direction indicates the inner structure changes occurrence. A Spectroscopic Ellipsometer was employed to measure the optical constants including refractive index and the extinction coefficient of the films. The optical bandgap decreased from 3.41 eV to 2.45 eV with the annealed temperature increasing. The variation is attributed to the Burstein-Moss effect.

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

“…The calculated band gaps for the sputtered In 2 Se 3 thin films are in good agreement with the reported value [20], as tabulated in table 2. At the same time, a similar change in E g with annealing temperature has been observed in the previous literature [24].…”