Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

Chen, Y.; Macintyre, D.; Boyd, E.; Moran, David A. J.; Thayne, Iain; Thoms, S.

doi:10.1116/1.1520564

Cited by 24 publications

(18 citation statements)

References 11 publications

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“…[6,7] Because of this, large-area performance may be difficult to obtain with the homopolymer. In fact, in our own experiments, the strong adhesion force when imprinting large areas (e.g., four in wafer size) of dense 200 nm period grating structures using PMMA would cause either the mold or the substrate to break during the mold-sample separation.…”

Section: Resultsmentioning

confidence: 99%

“…Commercially available polymer materials such as PMMA are susceptible to mold sticking and fracture defects during mold release that are intolerable for many device applications. [6,7] During NIL, the large surface-area features of the mold are brought into physical contact with the resist surface, and then separated with a normal force sufficient to overcome the adhesion forces between the mold and resist surfaces. In this respect, the polymer should satisfy these seemingly contradictory requirements of having a low surface energy and high fracture strength, yet maintaining sufficient adhesion to the substrate.…”

Section: Introductionmentioning

confidence: 99%

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Siloxane Copolymers for Nanoimprint Lithography

Choi¹,

Fu²,

Guo³

2006

Adv Funct Materials

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Presented here is the novel use of thermoplastic siloxane copolymers as nanoimprint lithography (NIL) resists for 60 nm features. Two of the most critical steps of NIL are mold release and pattern transfer through dry etching. These require that the NIL resist have low surface energy and excellent dry‐etching resistance. Homopolymers traditionally used in NIL, such as polystyrene (PS) or poly(methyl methacrylate) (PMMA), generally cannot satisfy all these requirements as they exhibit polymer fracture and delamination during mold release and have poor etch resistance. A number of siloxane copolymers have been investigated for use as NIL resists, including poly(dimethylsiloxane)‐block‐polystyrene (PDMS‐b‐PS), poly(dimethylsiloxane)‐graft‐poly(methyl acrylate)‐co‐poly(isobornyl acrylate) (PDMS‐g‐PMA‐co‐PIA), and PDMS‐g‐PMMA. The presence of PDMS imparts the materials with many properties that are favorable for NIL, including low surface energy for easy mold release and high silicon content for chemical‐etch resistance—in particular, extremely low etch rates (comparable to PDMS) in oxygen plasma, to which organic polymers are quite susceptible. These properties give improved NIL results.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Siloxane Copolymers for Nanoimprint Lithography

Choi¹,

Fu²,

Guo³

2006

Adv Funct Materials

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“…This process was then successfully applied in the fabrication of GaAs-based p-HEMTs with 120-nm nanoimprinted T-shape gates. In this work, self-alignment of source-drain contacts [92] using the pre-fabricated T-shape gate by NIL as mask was applied [33,93,94]. The whole process flow is illustrated in Fig.…”

Section: Nil For T-shape Gates and Hemtsmentioning

confidence: 99%

“…In the past two decades, a substantial amount of work have been conducted in solving these technical difficulties [2,14,[23][24][25][26][27][28]. Broad applications of NIL have been witnessed, particularly in the manufacture of nanostructures [29][30][31][32], nanodevices [33,34], optic components [35,36], highdensity quantized magnetic disks [37] and Si MOSFETs [38][39][40][41][42][43][44][45][46][47][48][49][50][51][52], etc. This paper will review some of the applications by NIL in these areas through several examples.…”

Section: Introductionmentioning

confidence: 99%

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Applications of nanoimprint lithography/hot embossing: a review

Chen

2015

Appl. Phys. A

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This review concentrates on the applications of nanoimprint lithography (NIL) and hot embossing for the fabrications of nanolectronic devices, nanophotonic metamaterials and other nanostructures. Technical challenges and solutions in NIL such as nanofabrication of templates, removal of residual resist, pattern displacement in thermal NIL arising from thermal expansion are first discussed. In the nanofabrication of templates, dry etch in plasma for the formation of multi-step structures and ultra-sharp tip arrays in silicon, nanophotonic chiral structures with high aspect ratio in SiC are demonstrated. A bilayer technique for nondestructive removal of residual resist in thermal NIL is described. This process is successfully applied for the fabrication of T-shape gates and functional high electron mobility transistors. However, pattern displacement intrinsically existing in thermal NIL/hot embossing owing to different thermal expansions in the template and substrate, respectively, limits its further development and scale-up. Low temperature even room temperature NIL (RTNIL) was then proposed on HSQ, trying to eliminate the pattern distortion by avoiding a thermal loop in the imprint. But, considerable pressure needed in RTNIL turned the major attentions to the development of UVcuring NIL in UV-curable monomers at low temperature. A big variety of applications by low-temperature UV-curing NIL in SU-8 are described, including high-aspect-ratio phase gratings, tagging technology by nanobarcode for DNA sequencing, nanofluidic channels, nanophotonic metamaterials and biosensors. Hot embossing, as a parallel technique to NIL, was also developed, and its applications on ferroelectric polymers as well as metals are reviewed. Therefore, it is necessary to emphasize that this review is mainly attempted to review the applications of NIL/embossing instead of NIL technique advances.

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Room‐Temperature, Low‐Pressure Nanoimprinting Based on Cationic Photopolymerization of Novel Epoxysilicone Monomers

Cheng

Guo

2005

Advanced Materials

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The method presented here illustrates a synthetic route that has been developed for the growth of uniaxially aligned ExperimentalThe starting materials for reaction precursors were cobalt nitrite (Co(NO) 3´6 H 2 O, 98 %, Sigma±Aldrich), iron chloride (FeCl 2´4 H 2 O, 99 %, Sigma±Aldrich), oxalic acid (H 2 C 2 O 4 , 99 %, Sigma±Aldrich), cyclohexane (Sigma±Aldrich), n-pentanol (Sigma±Aldrich), and cetyltrimethylammonium bromide (CTAB, Sigma±Aldrich). In a typical synthesis, a quaternary microemulsion consisting of CTAB/water/cyclohexane/n-pentanol was prepared by dissolving CTAB (2.5 g) in a mixture of 75 mL of cyclohexane and 2.5 mL of n-pentanol. The resulting solution was stirred for 20 min. Subsequently, 3.75 mL of an 0.8 M H 2 C 2 O 4 aqueous solution was added into the above solution and the mixture was stirred for an additional 45 min. Finally, 1.25 mL of an aqueous solution containing 0.05 M Co(NO) 3´6 H 2 O and 0.1 M FeCl 2´4 H 2 O was added to the above microemulsion and stirred for 24 h at room temperature. The solid product was recovered by centrifugation and was dried in air at ambient temperature. The solid product was then heated from 100 to 720 C for 2.5 h and annealed at 720 C for another 3 h to obtain the final product. Room-Temperature, Low-Pressure Nanoimprinting Based on Cationic Photopolymerization of Novel Epoxysilicone Monomers** By Xing Cheng, L. Jay Guo,* and Peng-Fei Fu* Nanoimprint lithography (NIL) [1±3] is an emerging lithographic technique that promises high-throughput patterning of nanostructures with great precision. [4,5] The simplicity and high resolution provided by this technique have found numerous applications in electronics, such as in hybrid plastic electronics, [6] organic thin-film transistors and electronics, [7,8] and nanoelectronic devices in Si [9,10] and GaAs; [6,11] in photonics, such as in organic lasers, [12] pixels of high-resolution organic light-emitting diodes, [13] diffractive optical elements, [14] waveguide polarizers, [15] and active [16] and nonlinear optical polymer nanostructures; [17] in magnetic devices, like high-density quantized magnetic discs, [18] and patterned magnetic media; [19] as well as in biological applications, such as manipulating DNA in nanofluidic channels [20±22] and nanoscale protein pat-COMMUNICATIONS

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Fabrication of high electron mobility transistors with T-gates by nanoimprint lithography

Cited by 24 publications

References 11 publications

Siloxane Copolymers for Nanoimprint Lithography

Siloxane Copolymers for Nanoimprint Lithography

Applications of nanoimprint lithography/hot embossing: a review

Room‐Temperature, Low‐Pressure Nanoimprinting Based on Cationic Photopolymerization of Novel Epoxysilicone Monomers

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