2006
DOI: 10.1063/1.2227633
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Fabrication of half-pitch 32nm resist patterns using near-field lithography with a-Si mask

Abstract: Articles you may be interested inSub-20nm silicon patterning and metal lift-off using thermal scanning probe lithography J. Vac. Sci. Technol. B 33, 02B102 (2015); 10.1116/1.4901413 Talbot effect immersion lithography by self-imaging of very fine grating patterns J. Vac. Sci. Technol. B 30, 06FG02 (2012); 10.1116/1.4767440 Combined helium ion beam and nanoimprint lithography attains 4nm half-pitch dense patterns J. Vac. Sci. Technol. B 30, 06F304 (2012); 10.1116/1.4758768Fabrication of 22 nm half-pitch silicon… Show more

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Cited by 35 publications
(23 citation statements)
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“…However, phenomena at a structured liquid-solid interface, such as evaporation, condensation, diffusion, and wetting, are related to complex physics and chemistry over a wide range of temporal-spatial scale, and hence, it is difficult to obtain a complete picture of the phenomena. 1,2 In the semiconductor industry, with the help of the photolithographic technique which enables us to produce nanometerscale structures, 3 controlling those phenomena in the vicinity of the structures is a crucial issue especially in the wet cleaning process used to manufacture semiconductor devices, 4 and a precise understanding of those phenomena is also beneficial to design surfaces to control the mass, momentum, and energy transport phenomena which occur at and through the interface. a) Electronic mail: ku.fujiwara@screen.co.jp b) Electronic mail: siba@mech.eng.osaka-u.ac.jp…”
Section: Introductionmentioning
confidence: 99%
“…However, phenomena at a structured liquid-solid interface, such as evaporation, condensation, diffusion, and wetting, are related to complex physics and chemistry over a wide range of temporal-spatial scale, and hence, it is difficult to obtain a complete picture of the phenomena. 1,2 In the semiconductor industry, with the help of the photolithographic technique which enables us to produce nanometerscale structures, 3 controlling those phenomena in the vicinity of the structures is a crucial issue especially in the wet cleaning process used to manufacture semiconductor devices, 4 and a precise understanding of those phenomena is also beneficial to design surfaces to control the mass, momentum, and energy transport phenomena which occur at and through the interface. a) Electronic mail: ku.fujiwara@screen.co.jp b) Electronic mail: siba@mech.eng.osaka-u.ac.jp…”
Section: Introductionmentioning
confidence: 99%
“…Recently, many sorts of near-field lithography systems have been reported [18][19][20][21][22]. Conventional near-field lithography has achieved sub-50 nm resolution using special masks such as lightcoupling mask or phase-shift mask [23].…”
Section: Introductionmentioning
confidence: 99%
“…As such, a template manufacturing process that is capable of easily fabricating 3D templates while also enabling the bottomup filling of the 3D template could be used in applications such as chiral photonics, 3-5 MEMS, 11 chemistry-on-a-chip, 12 nanofluidics, 13 and more. [14][15][16][17] To overcome these challenges, this article introduces a simple twostep process to both create a 3D template and fill it using wet chemical techniques. First, a 3D template is fabricated in silicon using Metalassisted Chemical Etching (MaCE) and then the MaCE catalyst rez E-mail: cp.wong@mse.gatech.edu maining at the bottom of the template is used as a seed to electrolessly fill the 3D template from the bottom-up.…”
mentioning
confidence: 99%