Fabrication of graded Cu(InGa)Se/sub 2/ films by inline evaporation

Hanket, Gregory M.; Paulson, P. D.; Singh, Udai P.; Junker, S.; Birkmire, Robert W.; Doyle, Francis J.; Eser, E.; Shafarman, W. N.

doi:10.1109/pvsc.2000.915881

Cited by 10 publications

(13 citation statements)

References 8 publications

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“…Figure 15 shows the spectra taken at 0.5 and 4 incidence for precursors deposited on SLG substrate. The spectra shows the presence of In, Cu 3 Ga, Cu 4 In, and Cu 9 (In 1-x ,Ga x ) 4 , phases. It can be seen that the intensity of the In phase was higher in the surface region than the bulk due to the contribution from the islands.…”

Section: De-fg36-08go18068mentioning

confidence: 97%

“…In this case, in addition to the device performances, the composition of the absorbers has been measured (Table IV). It should be pointed out that Cu(InGa)Se 2 films deposited in the stationary system have uniform depth composition while the ones deposited in the in-line system always show a gradient in Ga and In through the depth (3,4,6) . As such compositions measured by energy More precise characterization of the chemistry and of the interdiffusion of trace amounts of impurities from SLG and SS/SBR substrates were characterized by the secondary ion mass spectroscopy (SIMS) at NREL.…”

Section: Figmentioning

confidence: 99%

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Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

Eser¹

2012

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EXECUTIVE SUMMARYThe present project validated the use of stainless steel flexible substrate coated with silicone-based resin dielectric, developed by Dow Corning Corporation, for Cu(InGa)Se 2 based photovoltaics. The project's driving force was the high performance of Cu(InGa)Se 2 based photovoltaics coupled with potential cost reduction that could be achieved with dielectric coated SS web substrate.First, 430SS was shown to be the preferred substrate based on the suitable thermal expansion coefficient. However, randomly distributed shunt paths through the siliconebased resin had to be burned with voltage pulses for module fabrication. Reducing the density of the shunt paths through changes in the process and locating and burning the remaining ones has resolved the issue for the project. However this process of shunt burning may be problematic in a manufacturing environment.On vapor deposited films of Cu(InGa)Se 2, small area cell efficiency of more than 15% has been obtained with Cu(InGa)Se 2 thickness as small as 1.2 m. For Cu(InGa)(SSe) 2 films obtained by precursor selenization, efficiencies of more than 12% were demonstrated. However, in this process, transitioning from glass substrate to an SS based one is believed to require a different and robust approach.Uniformity of the device performance was shown on a 6 feet roll-to-roll PVD deposited Cu(InGa)Se 2 . The central 4 ft of the web, when sampled every foot, provided devices with high efficiencies of more than 12% with Cu(InGa)Se 2 thickness of 1.4 m.Throughput up to 3 and 6 inches/min web speeds resulted in efficiencies in the range of 9 to 11% with an absorber thickness of around 1 m.The work on module fabrication was challenging in some respects. All laser monolithic integration has been a difficult problem that requires further work and more innovative solutions.

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Section: De-fg36-08go18068mentioning

confidence: 97%

Section: Figmentioning

confidence: 99%

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

Eser¹

2012

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“…Solar cells were also fabricated at the Institute for Energy Conversion (IEC) following their well-established fabrication process (ref. 25). This was done in order to isolate issues related to AACVD deposition of CIS films from those associated with the rest of the solar cell fabrication at GRC.…”

Section: Fabrication Of Cuins 2 Solar Cellsmentioning

confidence: 99%

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

Hepp

McNatt

Dickman

et al. 2006

4th International Energy Conversion Engineering Conference and Exhibit (IECEC)

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“…4 Such inferences are subject to some drift and variability due to spatial temperature nonuniformity in the source. A filament bombards deposition fluxes with electrons, causing the resulting excited atoms to emit photons at wavelengths unique to the inter-orbital transitions for that element.…”

Section: Diagnostics For the Absorber Layermentioning

confidence: 99%

In Situ Sensors for CIGS Deposition and Manufacture

et al. 2005

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In situ sensors are an important tool for process control, optimization, and documentation, both in the laboratory and industrial environments. Their further application to deposition of CuIn x Ga 1-x Se 2 (CIGS) for photovoltaics is particularly important, as record device efficiencies produced in the laboratory have yet to be replicated in manufacturing. This paper provides an overview of the current state of the art of in situ diagnostics for devices based on coevaporated CIGS.

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Fabrication of graded Cu(InGa)Se/sub 2/ films by inline evaporation

Cited by 10 publications

References 8 publications

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

Development of a Low Cost Insulated Foil Substrate for Cu(InGaSe)2 Photovoltaics

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

In Situ Sensors for CIGS Deposition and Manufacture

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