“…Nonetheless, there are several reports highlighting challenges with depositing high quality thin films using CVD, metal-organic chemical vapor deposition (MOCVD), low-pressure-MOCVD and AACVD. [18][19][20][21] In these, thin films were deposited from various molecular precursors, for example asymmetrical dialkyldithiocarbamates, 19 bis(ethylisobutylacetates), tris(N,N-ethylbutyldithiocarbamates) 21 and single-source precursors such as [Bu2In-(SiPr)Cu(S2CNiPr2)] 20 and [(PPh3)2Cu(SEt)2In(SEt)2]. 18 Typically, films were non-stoichiometric, polyphasic (e.g.…”