Fabrication of GaN nanowires by a vapor–liquid–solid method using metal–organic chemical vapor deposition

Abstract

We examined the characteristics of one-dimensional GaN nanowires grown by a vapor-liquid-solid method using metal organic chemical vapor deposition equipment. GaN nanowires grown at 700 °C were uniform in size, approximately 5 µm in length and 200 nm in diameter, with a high density. X-ray diffraction showed that the nanowires grew as wurtzite GaN with random directions. Photoluminescence at 4 K revealed excitonic emission but no yellow luminescence. By using a temperature dependant photoluminescence, the bandgaps at 0 K of free exiton (FX) and donorbound exciton (D°X) calculated using Varshni's equation were 3.476 and 3.470 eV, respectively. The activation energies of D°X and FX were 19.1 and 12.8 meV, respectively.

Direct Synthesis of Oxynitride Nanowires through Atmospheric Pressure Chemical Vapor Deposition

“…Accordingly, nanowires with d~205 nm and L~1.15 m were obtained by moving the location of the substrate to a farther distance (D = 13 cm). The average areal density of the nanowires was approximately ~4.1 × 10 7 cm −2 , favourably comparable to those reported for the thin films of GaN prepared via vacuum metal organic CVD (1.5 × 10 4 cm −2 ) [ 26 ] and molecular beam epitaxy (1.0 × 10 10 cm −2 ) [ 27 ]. Approximately 31% of the Au nanoparticles ( = 80–300 nm) were utilized for nanowire growth, slightly lower than the 49% reported for the dense ZnO nanowire arrays prepared via vacuum CVD [ 28 ].…”