Study on tower-like GaN nanostructure: Growth, optical and fast UV sensing properties

Wang, Ting; Cao, Fahai; Ji, Xiaohong; Zhang, Qinyuan

doi:10.1016/j.spmi.2019.106233

Cited by 9 publications

(3 citation statements)

References 39 publications

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“…7−10 However, GaN-nanotower(GaN-NT)-like structures have also been grown but their use as UV detectors has rarely been reported. 11 Despite all these advantages, there has been a persisting challenge of a high dark current and low sensing ability associated with GaN-based devices, which needs further consideration in device designing.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, nanostructures (NSs) provide additional advantages specifically in photodetection applications, where a larger surface-to-volume ratio of NSs leads to increased incident photon absorption sites. This improved photon absorption via highly crystalline NSs could lead to reduced channel resistance and enhanced photoconductivity as well as the electrical conductivity of the devices. − Therefore, numerous GaN-NSs such as nanoislands, nanodisks, nanoflowers, nanowires, and nanocolumns have been utilized to achieve energy-efficient devices. − However, GaN-nanotower(GaN-NT)-like structures have also been grown but their use as UV detectors has rarely been reported . Despite all these advantages, there has been a persisting challenge of a high dark current and low sensing ability associated with GaN-based devices, which needs further consideration in device designing.…”

Section: Introductionmentioning

confidence: 99%

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GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

Goswami

Aggarwal

Singh

et al. 2020

ACS Appl. Nano Mater.

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Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) photodetector. The UV detector fabricated on a bare GaN-NT array yielded highly sensitive and repeatable device characteristics attributed by high responsivity (R), low noise equivalent power (NEP), and a high external quantum efficiency (EQE) of 484.77 A/W, 1.76 × 10 −13 W.Hz -1/2 , and 1.85 × 10 5 %, respectively. Furthermore, the developed UV photodetector demonstrated fast response with excellent stability when functionalized with Au nanoparticles and ZnO nanorods. This hybridized GaN-NT-based device with ZnO nanorods and Au nanoparticles significantly accelerated the performance of the device where a prominent threeorder reduction under dark current is observed along with gigantic R, lower NEP, and an extremely enhanced EQE of 7042 A/W, 1.84 × 10 −14 W.Hz -1/2 , and 2.7 × 10 6 %, respectively. The mechanism elaborating the enhanced device performance with a localized surface plasmon effect has been discussed through an energy band diagram. The fabricated highly sensitive device can lead the path toward future optoelectronic applications of integrated III-nitride technology.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

Goswami

Aggarwal

Singh

et al. 2020

ACS Appl. Nano Mater.

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“…The UV/green contrast ratio of this device is about 1×10 5 , and the response time is less than 10 ns. Wang T [15] reported the fabrication of tower-like GaN nanostructured MSM UV photodetectors using CVD system. The device has a photoresponsivity of 122.07 mA/W at 3 V bias, a rise time of less than 82 ms, and a decay time of 164 ms. Li D [16] reported a Ni/GaN/Au asymmetric MSM UV detector with a response at 0 V bias, it improved photoresponsivity when a positive bias is applied to the Ni/GaN interface.…”

Section: Introductionmentioning

confidence: 99%

The Gold Nanoparticles Enhanced ZnO/GaN UV Detector

Song

Dai

et al. 2022

IEEE J. Electron Devices Soc.

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Ultraviolet detectors can be used in ultraviolet disinfection, missile guidance and short-wave communication fields. Here we have grown GaN (002) film by chemical vapor deposition (CVD), through depositing 100 nm ZnO film as buffer layers on sapphire substrates by magnetron sputtering. Using Ni as the electrode, the metal-semiconductor-metal (MSM) ultraviolet (UV) detector was prepared. The device dark current, photocurrent and UV on/off current ratio were 5.19×10 -9 A, 2.52×10 -7 A and 54, under 2V bias. Then, using Au nanoparticles as plasmons, the photocurrent and photoresponsivity of the device were increased by 5.32 times and 5.25 times, respectively, and the UV on/off current ratio reached 176. The photoresponsivity of the device reaches the maximum value 0.42A/W at 370nm, the response time and relaxation time reach 0.1s and 0.12s, respectively.

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Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process

Zhang

Deng

2020

Applied Surface Science

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Study on tower-like GaN nanostructure: Growth, optical and fast UV sensing properties

Cited by 9 publications

References 39 publications

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

GaN Nanotowers Grown on Si (111) and Functionalized with Au Nanoparticles and ZnO Nanorods for Highly Responsive UV Photodetectors

The Gold Nanoparticles Enhanced ZnO/GaN UV Detector

Highly efficient and damage-free polishing of GaN (0 0 0 1) by electrochemical etching-enhanced CMP process

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