Direct Synthesis of Oxynitride Nanowires through Atmospheric Pressure Chemical Vapor Deposition

Abstract

Binary and ternary oxynitride solid alloys were studied extensively in the past decade due to their wide spectrum of applications, as well as their peculiar characteristics when compared to their bulk counterparts. Direct bottom-up synthesis of one-dimensional oxynitrides through solution-based routes cannot be realized because nitridation strategies are limited to high-temperature solid-state ammonolysis. Further, the facile fabrication of oxynitride thin films through vapor phase strategies has remained extremely challenging due to the low vapor pressure of gaseous building blocks at atmospheric pressure. Here, we present a direct and scalable catalytic vapor–liquid–solid epitaxy (VLSE) route for the fabrication of oxynitride solid solution nanowires from their oxide precursors through enhancing the local mass transfer flux of vapor deposition. For the model oxynitride material, we investigated the fabrication of gallium nitride and zinc oxide oxynitride solid solution (GaN:ZnO) thin film. GaN:ZnO nanowires were synthesized directly at atmospheric pressure, unlike the methods reported in the literature, which involved multiple-step processing and/or vacuum operating conditions. Moreover, the dimensions (i.e., diameters and length) of the synthesized nanowires were tailored within a wide range.

Oxynitride from Oxide versus Nitride: Manifesting Competitive and Synergistic Properties in Titanium Oxynitride for Solar‐Driven Water Splitting and Nitrogen Fixation

“…[ 9 ] This is because the stable formation of unary metal oxynitrides is challenging due to the unfavorable oxidation state of the metal ions bonding with the O and N ions to form a stoichiometric oxynitride system. [ 10 ] As a result, it often leads to the synergistic formation of oxide–nitride lattices constructing such nonconventional unary‐metal oxynitrides. [ 11 ] Unlike the synthesis of conventional binary/multimetal oxynitride systems, synthesis of unary‐metal oxynitrides is not often found to be facile.…”