Fabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flow

Ku, Ching−Shun; Huang, Jheng-Ming; Lin, Chih‐Ming; Lee, Hsin‐Yi

doi:10.1016/j.tsf.2009.09.018

Cited by 32 publications

(19 citation statements)

References 27 publications

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“…There have been a few reports on conductive epitaxial ZnO layers doped with Ga or Al [18,19]. The growth of ALD deposited monocrystalline layers has been proved to be possible as well [20][21][22][23], but the conductivity of these layers has not been examined.…”

Section: Introductionmentioning

confidence: 99%

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

et al. 2014

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The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2*10 -4 Ωcm with both the mobilities and the carrier concentrations very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate.

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Section: Introductionmentioning

confidence: 99%

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

et al. 2014

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“…1 ZnO can be used for preparing nanostructures with a diversified morphology including nanowires, 2,3 nanorods, 4,5 and nanoparticles, 6 which have their own novel physical, chemical, and mechanical properties resulting from their nanosize. 1 ZnO can be used for preparing nanostructures with a diversified morphology including nanowires, 2,3 nanorods, 4,5 and nanoparticles, 6 which have their own novel physical, chemical, and mechanical properties resulting from their nanosize.…”

Section: Introductionmentioning

confidence: 99%

“…5 ZnO itself is an intrinsically n-type semiconductor, and stability of controllable p-type ZnO thin film is not satisfactory. 1,3 In fact, despite a large lattice mismatching and difference in thermal coefficients between the Si and ZnO, 9 investigation on Si/ZnO heterojunction nanodevices are becoming popular because of the low cost, nontoxic, and environment friendly characteristics of both Si and ZnO materials. 1,3 In fact, despite a large lattice mismatching and difference in thermal coefficients between the Si and ZnO, 9 investigation on Si/ZnO heterojunction nanodevices are becoming popular because of the low cost, nontoxic, and environment friendly characteristics of both Si and ZnO materials.…”

Section: Introductionmentioning

confidence: 99%

“…10 Further, these structures can be compatible with already established Si-based microelectronics industrial applications. [1][2][3][4][5][6]8 However, very recently, a new era of research interest has been explored toward the development of Si/ZnO heterojunctions based on Si-nanostructures. [1][2][3][4][5][6]8 However, very recently, a new era of research interest has been explored toward the development of Si/ZnO heterojunctions based on Si-nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

Hazra

Singh

Jit

2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inImpact of annealing on the chemical structure and morphology of the thin-film CdTe/ZnO interface J. Appl. Phys. 116, 024312 (2014); 10.1063/1.4890235 CdS nanofilms: Effect of film thickness on morphology and optical band gap Growth morphology and electrical/optical properties of Al-doped ZnO thin films grown by atomic layer deposition J. Vac. Sci. Technol. A 30, 021202 (2012); 10.1116/1.3687939Texture vs morphology in ZnO nano-rods: On the x-ray diffraction characterization of electrochemically grown samplesIn this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core-shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type h100i planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core-shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current-voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core-shell heterojunction devices, the output current rating is about 130 times larger compared to their planar version at 2 V forward bias voltage. This higher output current rating can be exploited for fabricating high-performance nanoelectronic and optoelectronic devices in near future.

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“…9 In the present work, ZnO thin films fabricated at temperature ϳ25°C by ALD with interruption of the flow rate ͑FRI͒ showed satisfactory near-band-edge ͑NBE͒ emission intensity and an insignificant green band. 10 There is no report of the optical response and structural characterization of annealing on the growth of n-ZnO/ p-Si heterojunctions by ALD at a low temperature. Here we present photoluminescence ͑PL͒ spectra from a n-ZnO/ p-Si heterojunction measured at 10 K, the origin of compound-related NBE emission bands deduced from in situ x-ray diffraction ͑XRD͒ and profile results from secondary-ion mass spectrometry ͑SIMS͒.…”

mentioning

confidence: 99%