Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

Ku, Ching−Shun; Huang, Jheng-Ming; Cheng, C. C.; Lin, Chih‐Ming; Lee, Hsin‐Yi

doi:10.1063/1.3511284

Cited by 13 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We characterized the ferroelectric properties by measuring the polarization hysteresis; to remove the effect of leakage, we measured the P−E hysteresis loops of the BFO thin films at 5 V and 5 kHz, which yielded saturated loops. 33 To decrease the concentration of the H + state remaining in the BFO thin films after finishing the ALD process, 34 we annealed the BFO thin film for 2 h at 250 °C. Figure 9 shows the ferroelectric properties of BFO thin films; from measurements of the hysteresis loop at RT, the largest remanent polarization 2P r near 2 μC cm −2 was observed for the BFO thin film deposited at 500 °C.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Liu¹,

Chiu

et al. 2013

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Highly (001)-oriented BiFeO3 ultrathin films of total thickness of less than 10 nm were deposited on Si(001) substrates via deposition of atomic layers (ALD) with a LaNiO3 buffer. A radio-frequency (RF)-sputtered sample of the same thickness was prepared for comparison. The ALD combined with interrupted flow and an exchange reaction between Bi and Fe precursors provides a superior method to grow ternary compounds. According to X-ray diffraction, upon deposition at a temperature of less than 550 °C, the only phase in the film was BiFeO3. Anomalous fine structure from synchrotron X-ray diffraction certified the valence bonding through the BiFeO3 (001) diffraction signal. The stoichiometric ratio of BiFeO3 obtained from X-ray photoelectron spectroscopy indicated that ALD has a proportion much improved over the RF preparation, and this is also in agreement with the results for diffraction anomalous fine structure. The use of high-resolution transmission electron and atomic force microscopes showed that the layer structure and morphology from ALD presented a satisfactory coverage, more conformal than that with the RF method. The BiFeO3 thin film deposited with ALD shows excellent leakage, improved at least 1000 times with respect to the RF preparation, making this method suitable for the fabrication of ferroelectric random-access memory devices. From the hysteresis loop, the largest remanent polarization was observed as 2Pr = 2.0 μC cm(-2).

show abstract

Section: ■ Results and Discussionmentioning

confidence: 99%

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Liu¹,

Chiu

et al. 2013

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

show abstract

“…The light emission from these setups is mostly reported to be in the UV range [262-264, 266, 269], but some studies report white [265] or blue emission [267,268,270]. Another commonly studied LED junction is ALD ZnO together with Si or SiO 2 -based materials [271][272][273][274], where the devices are designed either to enhance the photoluminescence properties of Si/SiO 2 [271] or to modify those of ZnO [272][273][274].…”

Section: Light-emitting Diodesmentioning

confidence: 99%

Atomic layer deposition of ZnO: a review

Tynell

Karppinen

2014

Semicond. Sci. Technol.

365

299

View full text Add to dashboard Cite

Due to the unique set of properties possessed by ZnO, thin films of ZnO have received more and more interest in the last 20 years as a potential material for applications such as thin-film transistors, light-emitting diodes and gas sensors. At the same time, the increasingly stringent requirements of the microelectronics industry, among other factors, have led to a dramatic increase in the use of atomic layer deposition (ALD) technique in various thin-film applications. During this time, the research on ALD-grown ZnO thin films has developed from relatively simple deposition studies to the fabrication of increasingly intricate nanostructures and an understanding of the factors affecting the fundamental properties of the films. In this review, we give an overview of the current state of ZnO ALD research including the applications that are being considered for ZnO thin films.

show abstract

“…In any case, the above XRD, EDS and ICP-AES observations seem to suggest that uniform doping of Al up to 11 at % is evidently achieved. Nevertheless, as had been pointed by Ku et al [ 37 ], since the bonding energy of the Al-O bond (~511 kJ/mol) is much larger than that of Zn-O bond (~271 kJ/mol), one might reasonably assume that the doped Al can easily break the Zn-O bond and occupy the Zn site. Consequently, larger Al doping concentration would lead to more reduction in the grain size of AZO-NPs, which is qualitatively consistent with the grain size analyses described above, except for Zn 0.89 Al 0.11 O.…”

Section: Resultsmentioning

confidence: 94%

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

et al. 2016

Self Cite

View full text Add to dashboard Cite

Nanosized aluminum-doped zinc oxide Zn1−xAlxO (AZO) powders (AZO-NPs) with x = 0.01, 0.03, 0.06, 0.09 and 0.11 were synthesized by chemical precipitation method. The thermogravimetric analysis (TGA) indicated that the precursors were converted to oxides from hydroxides near 250 °C, which were then heated to 500 °C for subsequent thermal processes to obtain preliminary powders. The obtained preliminary powders were then calcined at 500 °C for three hours. The structure and morphology of the products were measured and characterized by angle-dispersive X-ray diffraction (ADXRD) and scanning electron microscopy (SEM). ADXRD results showed that AZO-NPs with Al content less than 11% exhibited würtzite zinc oxide structure and there was no other impurity phase in the AZO-NPs, suggesting substitutional doping of Al on Zn sites. The Zn0.97Al0.03O powders (A3ZO-NPs) with grain size of about 21.4 nm were used for high-pressure measurements. The in situ ADXRD measurements revealed that, for loading run, the pressure-induced würtzite (B4)-to-rocksalt (B1) structural phase transition began at 9.0(1) GPa. Compared to the predicted phase-transition pressure of ~12.7 GPa for pristine ZnO nanocrystals of similar grain size (~21.4 nm), the transition pressure for the present A3ZO-NPs exhibited a reduction of ~3.7 GPa. The significant reduction in phase-transition pressure is attributed to the effects of highly selective site occupation, namely Zn2+ and Al3+, were mainly found in tetrahedral and octahedral sites, respectively.

show abstract

Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

Cited by 13 publications

References 19 publications

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Atomic layer deposition of ZnO: a review

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Contact Info

Product

Resources

About

Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition

Cited by 13 publications

References 19 publications

Ultrathin Oriented BiFeO3 Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Ultrathin Oriented BiFeO3 Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Atomic layer deposition of ZnO: a review

Structural Transitions in Nanosized Zn0.97Al0.03O Powders under High Pressure Analyzed by in Situ Angle-Dispersive X-ray Diffraction

Contact Info

Product

Resources

About

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties

Ultrathin Oriented BiFeO₃ Films from Deposition of Atomic Layers with Greatly Improved Leakage and Ferroelectric Properties