Fabrication of c‐axis oriented Ga‐doped MgZnO‐based UV transparent electrodes by molecular precursor method

Abstract

MgZnO films were fabricated by the molecular precursor method (MPM) for their application as UV transparent electrodes. It was clarified that annealing under suitable conditions using an Ar gas flow is effective for the realization of c‐axis‐oriented MgZnO films in the time of a pyrolysis reaction. The resistivity of the Ga‐doped Mg0.1Zn0.9O film was 2.5 × 10‐2 Ω · cm. The resistivity of the c‐axis‐oriented MgZnO films was lower than that of polycrystalline films. This is due to the reduction of the potential barrier at the boundaries of the crystallites. The spontaneous polarization affects the potential barrier. The c‐axis orientation reduces the potential barrier along the deposition plane (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Heat Treatment in Molecular Precursor Method for Fabricating Metal Oxide Thin Films

“…The MPM is a wet process for the formation of thin films of various metal oxides, including titania or calcium phosphate compounds [1][2][3][4][5][6][7][8][9][10][11]. This method is based on the design of metal complexes in coating solutions with excellent stability, homogeneity, miscibility, coatability, etc., which have many practical advantages.…”

“…From this point of view, modification by thin film fabrication on various substrates, as opposed to manufacturing the entire body with the functional material, can generally save resources. The molecular precursor method (MPM) that was developed in our study is a wet chemical process for fabricating metal oxide and phosphate thin films [1][2][3][4][5][6][7][8][9][10][11]. This method requires heattreatment to eliminate organic ligands from metal complexes involved in spin-coated precursor films and to fabricate thin films of crystallized metal oxides or phosphates.…”

Molecular Precursor Method for Fabricating p-Type Cu2O and Metallic Cu Thin Films

“…using the metal complexes of stable [10][11][12][13][14][15][16][17][18][19][20][21][22]. This is the MPM, which is one of the chemical processes used for thin ilm fabrication.…”

“…A stable precursor solution for the spin-coating process was facilely prepared by reacting an isolated Cu(II) complex of ethylenediamine-N, N, N', N'-tetraacetic acid (EDTA, H 4 edta) with dibutylamine in ethanol [10,11]. The MPM is one of the chemical processes used for thin ilm formation of metal oxides or phosphates [12][13][14][15][16][17][18][19][20][21][22]. The method is based on the formation of excellent precursor ilms involving anionic metal complexes and the alkylammonium cation.…”

Cathodoluminescence spectra of Ga–In–O polycrystalline films fabricated by molecular precursor method

“…Molecular precursor method (MPM), which was newly developed by Sato et al in 1996, 9) is a novel wet process for fabrication of metal oxide thin films such as TiO 2 , 10) Cu 2 O, 11) MgZnO, 12) etc. In this method, metal complex anions with high stability can be dissolved in suitable solvents such as ethanol by combining them with the appropriate alkylamines.…”