Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

Shimizu, Tomohiro; Sumita, Yuzuru; Inoue, Fumihiro; Minokuchi, Tetsuji; Shingubara, Shoso; Otsuka, Shintaro; Takase, Koichi

doi:10.1380/ejssnt.2012.476

Cited by 4 publications

(1 citation statement)

References 17 publications

(24 reference statements)

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“…Bottom-up self-assembly approaches were used to fabricate the nanoscale resistive switching memory devices. AAO was used as the template to obtain ordered nanoscale devices by the bottom-up approach 12 45 46 . The AAO is a self-assembled, nano-porous structure in which pore sizes, pore densities, and thicknesses can easily be controlled by adjusting the process parameters.…”

Section: Resultsmentioning

confidence: 99%

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Han

Lee

2016

Sci Rep

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The bottom-up approach using self-assembled materials/processes is thought to be a promising solution for next-generation device fabrication, but it is often found to be not feasible for use in real device fabrication. Here, we report a feasible and versatile way to fabricate high-density, nanoscale memory devices by direct bottom-up filling of memory elements. An ordered array of metal/oxide/metal (copper/copper oxide/copper) nanodots was synthesized with a uniform size and thickness defined by self-organized nanotemplate mask by sequential electrochemical deposition (ECD) of each layer. The fabricated memory devices showed bipolar resistive switching behaviors confirmed by conductive atomic force microscopy. This study demonstrates that ECD with bottom-up growth has great potential to fabricate high-density nanoelectronic devices beyond the scaling limit of top-down device fabrication processes.

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Section: Resultsmentioning

confidence: 99%

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Han

Lee

2016

Sci Rep

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Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

Pratama

Kurniawan

Muhammady

et al. 2018

Mater. Res. Express

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Direct formation of ZnO nanorods by hydrothermal process: study on its optical properties and electron transport

Mufti

Fuad

Fibriyanti

et al. 2020

Materials Science-Poland

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We report a new direct fabrication of the ZnO nanorods (NR) by hydrothermal method, in which the preparation of seed layer is eliminated. We show that the tuning of initial temperature rate during the hydrothermal process plays a key role in the structural modification of the ZnO NR. A highly oriented ZnO NR is successfully fabricated by using a low rate of initial temperature. The increase of optical absorption and electron transport was obtained by reducing the diameter and increasing distribution of the ZnO NR on the substrate. Interestingly, an additional absorption from the defects is obtained in the system, which plays an important role in expanding the optical absorption. Our system will provide a favourable characteristic for developing the high-performance optoelectronic devices with high optical absorption and high electron transport.

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Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

Cited by 4 publications

References 17 publications

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

Direct formation of ZnO nanorods by hydrothermal process: study on its optical properties and electron transport

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