Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Han, Un-Bin; Lee, Jang‐Sik

doi:10.1038/srep25537

Cited by 32 publications

(21 citation statements)

References 55 publications

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“…Because the memory window of the resistance states directly affects the sensing margin of memory devices, large memory window is required for reliable reading operation. Moreover, the large memory window can realize multi-level cell (MLC) applications 40 . The device-to-device uniformity of 2D material-based vertical RRAM devices are investigated, in terms of the cumulative distributions of resistance values for ten random memory devices under ten continuous switching cycles.…”

Section: Resultsmentioning

confidence: 99%

Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

Huang

Lee

2017

Sci Rep

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The development of RRAM is one of the mainstreams for next generation non-volatile memories to replace the conventional charge-based flash memory. More importantly, the simpler structure of RRAM makes it feasible to be integrated into a passive crossbar array for high-density memory applications. By stacking up the crossbar arrays, the ultra-high density of 3D horizontal RRAM (3D-HRAM) can be realized. However, 3D-HRAM requires critical lithography and other process for every stacked layer, and this fabrication cost overhead increases linearly with the number of stacks. Here, it is demonstrated that the 2D material-based vertical RRAM structure composed of graphene plane electrode/multilayer h-BN insulating dielectric stacked layers, AlOx/TiOx resistive switching layer and ITO pillar electrode exhibits reliable device performance including forming-free, low power consumption (Pset = ~2 μW and Preset = ~0.2 μW), and large memory window (>300). The scanning transmission electron microscopy indicates that the thickness of multilayer h-BN is around 2 nm. Due to the ultrathin-insulating dielectric and naturally high thermal conductivity characteristics of h-BN, the vertical structure combining the graphene plane electrode with multilayer h-BN insulating dielectric can pave the way toward a new area of ultra high-density memory integration in the future.

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Section: Resultsmentioning

confidence: 99%

Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

Huang

Lee

2017

Sci Rep

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“…On the contrary, the application of carefully controlled synthesis and functionalization procedures may lead to highly ordered architectures exhibiting the desired properties in an extremely reproducible fashion. Bearing in mind that theranostic nanostructure features are typically tailorable with a high grade of precision during the synthesis stage, the uniformity of the starting material plays a critical role, the reason why bottom-up approaches are generally preferred addressing the production of most reliable tools, and are concurrently more suitable for translational theranostic research [ 40 , 41 , 42 ].…”

Section: Introductionmentioning

confidence: 99%

Functionalization of Metal and Carbon Nanoparticles with Potential in Cancer Theranostics

et al. 2021

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Cancer theranostics is a new concept of medical approach that attempts to combine in a unique nanoplatform diagnosis, monitoring and therapy so as to provide eradication of a solid tumor in a non-invasive fashion. There are many available solutions to tackle cancer using theranostic agents such as photothermal therapy (PTT) and photodynamic therapy (PDT) under the guidance of imaging techniques (e.g., magnetic resonance—MRI, photoacoustic—PA or computed tomography—CT imaging). Additionally, there are several potential theranostic nanoplatforms able to combine diagnosis and therapy at once, such as gold nanoparticles (GNPs), graphene oxide (GO), superparamagnetic iron oxide nanoparticles (SPIONs) and carbon nanodots (CDs). Currently, surface functionalization of these nanoplatforms is an extremely useful protocol for effectively tuning their structures, interface features and physicochemical properties. This approach is much more reliable and amenable to fine adjustment, reaching both physicochemical and regulatory requirements as a function of the specific field of application. Here, we summarize and compare the most promising metal- and carbon-based theranostic tools reported as potential candidates in precision cancer theranostics. We focused our review on the latest developments in surface functionalization strategies for these nanosystems, or hybrid nanocomposites consisting of their combination, and discuss their main characteristics and potential applications in precision cancer medicine.

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“…memorizing an electric current history [2,3]. Resistance random access memory (ReRAM), which can realize memristor, has great advantages such as high-speed response, low power consumption, and good scalability [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

Ishibe

Matsuo

Terada

et al. 2020

Science and Technology of Advanced Materials

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For realization of new informative systems, the memristor working like synapse has drawn much attention. We developed isolated high-density Fe 3 O 4 nanocrystals on Ge nuclei/Si with uniform and high resistive switching performance using low-temperature growth. The Fe 3 O 4 nanocrystals on Ge nuclei had a well-controlled interface (Fe 3 O 4 /GeO x /Ge) composed of highcrystallinity Fe 3 O 4 and high-quality GeO x layers. The nanocrystals showed uniform resistive switching characteristics (high switching probability of~90%) and relatively high Off/On resistance ratio (~58). The high-quality interface enables electric field application to Fe 3 O 4 and GeO x near the interface, which leads to effective positively charged oxygen vacancy movement, resulting in high-performance resistive switching. Furthermore, we successfully observed memory effect in nanocrystals with well-controlled interface. The experimental confirmation of the memory effect existence even in ultrasmall nanocrystals is significant for realizing non-volatile nanocrystal memory leading to neuromorphic devices.

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Bottom-up synthesis of ordered metal/oxide/metal nanodots on substrates for nanoscale resistive switching memory

Cited by 32 publications

References 55 publications

Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

Graphene/h-BN Heterostructures for Vertical Architecture of RRAM Design

Functionalization of Metal and Carbon Nanoparticles with Potential in Cancer Theranostics

Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces

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