Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

Kura, Chiharu; Aoki, Yoshitaka; Tsuji, Etsushi; Habazaki, H.; Martin, Manfred

doi:10.1039/c5ra21160c

Cited by 26 publications

(17 citation statements)

References 36 publications

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“…The general belief is that a competition between conduction mechanisms, i.e., electrode limited conduction and bulk limited conduction, produce irreversible electronic states (LRS and HRS) and NDR effect [36][37][38][39]. The intrinsic ionic defects and vacancy controlled trapping and de-trapping of the charge carriers at the interfaces constitute electrode limited conduction, whereas transport of the charge carriers through the insulator/semiconductor sample constitutes the bulk conduction.…”

Section: Methodsmentioning

confidence: 99%

Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Bhowmik

Siva

Ranganathan

et al. 2017

Journal of Magnetism and Magnetic Materials

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The samples of Ga doped Cr 2 O 3 oxide have been prepared using chemical co-precipitation route.X-ray diffraction pattern and Raman spectra have confirmed rhombohedral crystal structure with space group R3 C. Magnetic measurement has indicated the dilution of antiferromagnetic (AFM) spin order in Ga doped α-Cr 2 O 3 system oxide, where the AFM transition temperature of bulk α-Cr 2 O 3 oxide at about 320 K has been suppressed and ferrimagnetic behavior is observed from the analysis of the temperature dependence of magnetization data below 350 K. Apart from Ga doping effect, the spin freezing (50 K-70 K) and superparamagnetic behavior of the surface spins at lower temperatures, typically below 50 K, have been exhibited due to nano-sized grains of the samples. All the samples showed non-linear current-voltage (I-V) characteristics. However, I-V characteristics of the Ga doped samples are remarkably different from α-Cr 2 O 3 sample. The I-V curves of Ga doped samples have exhibited many unique electronic properties, e.g., bi-stable (low resistance-LR and high resistance-HR) electronic states and negative differential resistance (NDR). Optical absorption spectra revealed three electronic transitions in the samples associated with band gap energy at about 2.67-2.81 eV, 1.91-2.11 eV, 1.28-1.35 eV, respectively. 2 Key Words: Magnetic semiconductor; tuning of band gap; negative differential resistance; I-V loop, bi-stable electronic state.

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Section: Methodsmentioning

confidence: 99%

Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Bhowmik

Siva

Ranganathan

et al. 2017

Journal of Magnetism and Magnetic Materials

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“…The Schottky equation and P-F equation were not applicable for NDR regime and above in the S1 segment of I-V curve. Although many metal oxides with M/MO/M structure have shown the coexistence of resistive switching and NDR effect [9,11,31], but the exact mechanism is not clear. Jia et al [20] observed the NDR in negative voltage side of I-V loop.…”

Section: Analysis Of Basic I-v Characteristicsmentioning

confidence: 99%

“…The thin films of transition metal oxides, e.g., Cr 2 O 3 [7], Ga 2 O 3 [8][9], Al 2 O 3 [10], Fe 2 O 3 [11], Ga-doped Fe 2 O 3 [12], Ba 0.7 Sr 0.3 TiO 3 [13], NiO [14], TiO 2 [15][16], and SiO 2 [17] have shown different types of resistive switching, i.e., unipolar, bipolar or abnormal nature.…”

Section: Introductionmentioning

confidence: 99%

Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system

Bhowmik

Siva

2018

Journal of Magnetism and Magnetic Materials

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The samples of Ga-doped Cr 2 O 3 system in rhombohedral crystal structure with space group R3 C were prepared by chemical co-precipitation route and annealing at 800 0 C.The current-voltage (I-V) curves exhibited many unique non-linear properties, e.g., hysteresis loop, resistive switching, and negative differential resistance (NDR). In this work, we report non-equilibrium properties of resistive switching and NDR phenomena. The non-equilibrium I-V characteristics were confirmed by repetiting measurement and time relaxation of current.The charge conduction process was understood by analysing the I-V curves using electrodelimited and bulk-limited charge conduction mechanisms, which were proposed for metal electrode/metal oxide/metal electrode structure. The I-V curves in the NDR regime and at higher bias voltage in our samples do not obeyed Fowler-Nordheim equation, which was proposed for charge tunneling mechanism in many thin film junctions. The non-equilibrium I-V phenomena were explained by considering the competitions between the injection of charge carriers from metal electrode to metal oxide, the charge flow through bulk material mediated by trapping/de-trapping and recombination of charge carriers at the defect sites of ions, the space charge effects at the junctions of electrodes and metal oxides, and finally, the out flow of electrons from metal oxide to metal electrode. electronic states. electric fields with alternate polarity, i.e., ON state (LRS) at one voltage polarity and OFF state (HRS) on reversing the voltage polarity. In abnormal bipolar resistive switching, the resistance state of the device is switched from LRS to HRS during positive polarity of electric field, and LRS to HRS during negative polarity of electric field. The abnormal resistive switching phenomenon has been observed in devices like Pt/GaO 3 /Pt [8] and Pt/TiO 2 /Pt [18]. Recently, thin films of BaTiO 3 [19] and ZnO [20] have shown the coexistence of resistive switching and negative differential resistance (NDR) behaviour ( < 0). The materials with room temperature NDR and resistive swirching are of increasing interest for applications in analog and digital circuits, including logic gates, voltage-controlled oscillator, and flip-flop circuit [21]. The additional feature of I-V loop is also important for applications of the materials in switching, low power memory, dynamic random access memory, static random access memory, and high storage density with long retention [22]. We present resistance switching and NDR phenomena at room temperature in a new material, developed by incorporating non-magnetic Ga atoms in the antiferromagnetic α-Cr 2 O 3 . The magnetic measurement [23] has shown Ga doped α-Cr 2 O 3 system as a diluted antiferromagnet with ordering temperature at about 50 K and a typical paramagnet at room temperature. This work is devoted to study the non-equilibrium I-V properties in thin pellet shaped samples of polycrystalline Ga doped α-Cr 2 O 3 system using Pt/CrGaO/Pt structure.The present transition metal oxide sample...

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“…16,17 The crystalline β-Ga 2 O 3 thin film deposited at 700°C is high insulative, and the resistance of the gallium oxide thin films decreases significantly with decreasing the growth temperatures. For depositing at 500°C, the non-stoichiometric and amorphous gallium oxide thin film shows high conductive, and the I-V characteristic curve clearly reveals a pinched hysteretic loop as sweeping the voltage with a cycle.…”

Section: -4 Guo Et Almentioning

confidence: 99%

“…For introducing oxygen vacancies in the gallium oxide thin film, tuning the ambient atmosphere and the substrate temperature appear to be crucial factors. [15][16][17] Herein, the nonstoichiometric gallium oxide thin films with an abundant oxygen vacancies were obtained at the low a Authors to whom all correspondence should be addressed. -6 Pa without introducing oxygen, using the pulsed laser deposition technology.…”

confidence: 99%

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

Guo

Qian

et al. 2017

AIP Advances

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The conductivity of gallium oxide thin films is strongly dependent on the growth temperature when they deposited by pulsed laser deposition under vacuum environment, exhibiting an insulative-to-metallic transition with the decrease of the temperature. The high conductive gallium oxide films deposited at low temperature are amorphous, non-stoichiometric, and rich in oxygen vacancy. Large changes in electrical resistance are observed in these non-stoichiometric thin films. The wide variety of hysteretic shapes in the I-V curves depend on the voltage-sweep rate, evidencing that the time-dependent redistribution of oxygen vacancy driven by bias is the controlling parameter for the resistance of gallium oxide.

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Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

Abstract: Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

Cited by 26 publications

References 36 publications

Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Doping of Ga in antiferromagnetic semiconductor α-Cr2O3 and its effects on magnetic and electronic properties

Non-equilibrium character of resistive switching and negative differential resistance in Ga-doped Cr2O3 system

Evidence for the bias-driven migration of oxygen vacancies in amorphous non-stoichiometric gallium oxide

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