Hydrogen permeability based on mixed hydride ion electron conduction was demonstrated for hafnium nitride HfNx (film thickness of 100–500 nm, x = 0.8 and 1.0) nanocrystalline membranes.
Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.
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