Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode

Kang, In-Ho; Kim, Sang-Cheol; Moon, Jung-Hyeon; Bahng, Wook; Kim, Nam Kyun

doi:10.3938/jkps.64.1886

Cited by 12 publications

(9 citation statements)

References 10 publications

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“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Figurementioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

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“…Data are taken from Refs. [ 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 ].…”

Section: Figurementioning

confidence: 99%

Materials and Processes for Schottky Contacts on Silicon Carbide

2021

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Section: Reviewmentioning

confidence: 99%

“…Indium phosphide (InP) is an important III-V material due to its electronic and optoelectronic device applications, such as solar cells, laser diodes, photodetectors, HEMTs, high-speed metal insulator semiconductor field-effect transistors, microwave sources and amplifiers operating at high power and high frequencies [22]. The major discrepancy in using an n-InP substrate for Schottky junctions arises due to high surface states and nonstoichiometric defects, which results in lower height value (<than 0.5 eV) of Schottky barrier [23] and a high reverse leakage current [24].Cetin and Ayyildiz [25] first studied the electrical properties of a MOS Schottky diode fabricated on an InP substrate and showed that Cu/n-InP and Al/n-InP Schottky barrier diodes with and without the interfacial oxide layer were fabricated.Native oxides have great importance in the passivation of the InP surface. Wolan and Hoflund [26] investigated these native oxides on the InP surface and found that oxides, such as In(PO 3 ) 3 condensed phosphates, can lead to MOS Schottky devices with low interface state density.…”

mentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…Based on this explanation, the leakage current for the inhomogeneous interface could be lower than the homogeneous interface because less current can flow through the barrier due to a high activation requirement. Kang [27] in his paper cited that a Schottky diode may exhibit a large leakage current, regardless of having a good ideality factor and the absence of an interface crystal defect.…”

Section: Electrical Characterizationmentioning

confidence: 99%

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

et al. 2019

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Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

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Fabrication of a 600-V/20-A 4H-SiC schottky barrier diode

Abstract: were 0.7% and 8.9% and that blocking voltage was enhanced. This is attributed to a stabilized interface between passivation layer and SiC that is caused by aging.

Cited by 12 publications

References 10 publications

Materials and Processes for Schottky Contacts on Silicon Carbide

Materials and Processes for Schottky Contacts on Silicon Carbide

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

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