High Voltage Graphene Nanowall Trench MOS Barrier Schottky Diode Characterization for High Temperature Applications

Abstract

Graphene’s superior electronic and thermal properties have gained extensive attention from research and industrial sectors to study and develop the material for various applications such as in sensors and diodes. In this paper, the characteristics and performance of carbon-based nanostructure applied on a Trench Metal Oxide Semiconductor MOS barrier Schottky (TMBS) diode were investigated for high temperature application. The structure used for this study was silicon substrate with a trench and filled trench with gate oxide and polysilicon gate. A graphene nanowall (GNW) or carbon nanowall (CNW), as a barrier layer, was grown using the plasma enhanced chemical vapor deposition (PECVD) method. The TMBS device was then tested to determine the leakage current at 60 V under various temperature settings and compared against a conventional metal-based TMBS device using TiSi2 as a Schottky barrier layer. Current-voltage (I-V) measurement data were analyzed to obtain the Schottky barrier height, ideality factor, and series resistance (Rs) values. From I-V measurement, leakage current measured at 60 V and at 423 K of the GNW-TMBS and TiSi2-TMBS diodes were 0.0685 mA and above 10 mA, respectively, indicating that the GNW-TMBS diode has high operating temperature advantages. The Schottky barrier height, ideality factor, and series resistance based on dV/dln(J) vs. J for the GNW were calculated to be 0.703 eV, 1.64, and 35 ohm respectively.

Development of 2DNM Heat Spreaders and GaN HEMT Technology for Advanced Power Electronic Applications

“…Depending on the process recipe, we are capable of growing different types of 2D nanomaterials to satisfy all three key characteristics of an ideal heat spreader as previously mentioned. In our previous work, we also investigated the use of vertical graphene as a heat spreader in a Schottky diode [8]. Since we are still solving the problems in the fabrication process of AlGaN/GaN HEMT, the thermal evaluation of the synthesized heat spreader was carried out using a hotspot test structure.…”

Evaluation on the Reduced Graphene Oxide Thermal Interface Material and Heat Spreader for Thermal Management in High-Temperature Power Device

“…One of the approaches to address this issue is through the incorporation of high thermal conductivity materials, e.g. 2-dimensional (2D) graphene and reduced graphene oxide (rGO) as a heat spreader at device-level [1,2], and thermal interface material (TIM) at packaging-level application [3]. For this purpose, exceptionally high thermal conductivity graphene up to 5150 W/mK [4] and rGO up to 2600 W/mK [5] are both appealing.…”