Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

Yue, Gen; Lei, Yu; Die, Junhui; Jia, Haiqiang; Chen, Hong

doi:10.1088/0256-307x/35/5/054207

Cited by 3 publications

(1 citation statement)

References 33 publications

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“…The proposed IL-GPSE can also be applied on nonuniform nanostructures, which are caused by the nonuniform laser beam intensity during IL, to compensate for the spatial variation for improved uniformity, which is essential in many optical applications that demand largearea uniform gratings 41,42 and precise interferometry 43 . Generally, large-area nanogratings fabricated by IL suffer radial-gradient linewidths due to the Gaussian profile in the interfering beams, and researchers often expand the Gaussian beam 44 or implement beam shaping devices to transform the Gaussian distribution to a flat top distribution 45 to acquire a relatively uniform intensity at the central exposure area. However, the former wastes a large amount of exposure energy and decreases the production capacity while the latter introduces a new challenge of fabricating high-quality large-area beam shaping devices.…”

Section: Uniform 4-inch Wafer-scale Patterning Using Il-gpsementioning

confidence: 99%

Spatial modulation of nanopattern dimensions by combining interference lithography and grayscale-patterned secondary exposure

Gan

Chen

et al. 2022

Light Sci Appl

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Functional nanostructures are exploited for a variety of cutting-edge fields including plasmonics, metasurfaces, and biosensors, just to name a few. Some applications require nanostructures with uniform feature sizes while others rely on spatially varying morphologies. However, fine manipulation of the feature size over a large area remains a substantial challenge because mainstream approaches to precise nanopatterning are based on low-throughput pixel-by-pixel processing, such as those utilizing focused beams of photons, electrons, or ions. In this work, we provide a solution toward wafer-scale, arbitrary modulation of feature size distribution by introducing a lithographic portfolio combining interference lithography (IL) and grayscale-patterned secondary exposure (SE). Employed after the high-throughput IL, a SE with patterned intensity distribution spatially modulates the dimensions of photoresist nanostructures. Based on this approach, we successfully fabricated 4-inch wafer-scale nanogratings with uniform linewidths of <5% variation, using grayscale-patterned SE to compensate for the linewidth difference caused by the Gaussian distribution of the laser beams in the IL. Besides, we also demonstrated a wafer-scale structural color painting by spatially modulating the filling ratio to achieve gradient grayscale color using SE.

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