Enhancement of light extraction efficiency of AlGaInP-based light emitting diodes by silicon oxide hemisphere array

Tang, Xiansheng; Wang, Lu; Zhao, Minglong; Huo, Wenxue; Han, Li‐Li; Deng, Zhen; Jiang, Yang; Wang, Wenxin; Chen, Hong; Du, Chunhua; Jia, Haiqiang

doi:10.1016/j.optcom.2020.126539

Cited by 6 publications

(1 citation statement)

References 25 publications

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“…The highest light output power (LOP) enhanced ratio is 40.5% by using some SiO2 photonic crystals [17]. X. Tang et al also prepared the nano-scale SiO2 arrays by the laser interference lithography (LIL) with the highest LOP enhanced ratios of 40% [18]. However, most methods have been conducted to prepare nano-scale structures such as electron beam lithography (EBL) [19], nanoimprinting [20], [21], metal mask assistance [22]- [27] and nanosphere mask [28]- [30].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Wen

Lin

Yang³

et al. 2023

IEEE Photonics J.

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In order to improve the light extraction efficiency (LEE) of a plane AlGaAs-based LED (Device A), three different surface periodic micron-scale arrays, micron pillar (Device B), micron truncated cone (Device C) and micron cone (Device D), are prepared by the conventional ultra-violet (UV) lithography. The morphology of the three devices B -D is characterized by a scanning electron microscopy (SEM). The periodic array structures improve the photon escape probabilities. In comparison to the Device A, the light output powers (LOPs) of the Devices B -D increase 54.0%, 145.5% and 157.2% at an injection current of 500 mA, respectively. Luminous uniformity of the periodic micron-scale array LEDs is better. Moreover, we use the Monte Carlo ray-tracing method to simulate the LEE of the four devices.

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