Fabrication and properties of GaN-based lasers

Perlin, P.; Świetlik, T.; Marona, Ł.; Czernecki, R.; Suski, T.; Leszczyński, M.; Grzegory, I.; Krukowski, S.; Nowak, G.; Kamler, G.; Czerwiński, A.; Plusa, M.; Bednarek, Michał; Rybiński, J.; Porowski, S.

doi:10.1016/j.jcrysgro.2008.06.010

Cited by 12 publications

(4 citation statements)

References 9 publications

(11 reference statements)

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“…LDs have also been fabricated on HPS substrates by MOCVD and MBE techniques, which have lower dislocation densities than the HVPE substrates. Under CW operation a maximum power of 215 mW can be achieved in the wavelength range 405-420 nm [126]. As mentioned above, the epitaxial films deposited on polar substrates result in the formation of a two-dimensional electron gas at the heteroepitaxial film-substrate interface, which is required for the fabrication of high electron mobility transistors (HEMTs).…”

Section: Bulk Nitride Based Optoelectronic and Electronic Devicesmentioning

confidence: 99%

Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

Freitas

2010

J. Phys. D: Appl. Phys.

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The technological importance of III-V nitride semiconductors relies on their variety of applications, which cover optical, optoelectronic and electronic devices capable of operating under extreme values of current, voltage and temperature. The major roadblock for full realization of the potential of nitride semiconductors is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapour phase epitaxy and ammonothermal for GaN and sublimation for AlN, much more must be attained before establishing a bulk growth technique of choice to grow these materials. A brief review of the structural, optical and electronic properties of the state of the art of bulk and thick-film (quasi-bulk) nitride substrates and homoepitaxial films is presented, and a few device applications are also highlighted.

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Section: Bulk Nitride Based Optoelectronic and Electronic Devicesmentioning

confidence: 99%

Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

Freitas

2010

J. Phys. D: Appl. Phys.

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“…[10] The nonuniformity of temperature among the stripes and along the cavity direction may deteriorate the wavelength stability, output power of LDs, and the device reliability. [5,11,12] In this paper, the thermal characteristics of a GaN-based LD mini-array (with 5 laser stripes) in a TO-9 package is analyzed by using finite element method (FEM). Based on the analysis results, the arrangement of stripes is studied and opti-mized numerically to enhance the temperature uniformity.…”

Section: Introductionmentioning

confidence: 99%

Thermal analysis of GaN-based laser diode mini-array

Zhang

et al. 2018

Chinese Phys. B

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Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K.

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“…However, the crystals obtained by the presently dominating method of GaN substrate production have an average density of dislocations in the order of 10 5 –10 6 cm −2 . Alternative methods, like the high‐pressure synthesis method offer advantages, with the TD density lower than 100 cm −2 in grown crystals (Perlin et al , 2008). Because TDs density in the initial substrate influences TDs density in the epitaxial layers, the nitride‐based LDs with such almost dislocation‐free high‐pressure grown crystalline bulk GaN substrates are very promising from the reliability point of view.…”

Section: Introductionmentioning

confidence: 99%

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Płuska

Czerwiński

Ratajczak

et al. 2009

Journal of Microscopy

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Summary Cathodoluminescence (CL) studies are widely applied in semi‐conductor science and technology. However, for structures with a p‐n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.

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Fabrication and properties of GaN-based lasers

Cited by 12 publications

References 9 publications

Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers

Thermal analysis of GaN-based laser diode mini-array

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

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