New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Płuska, Mariusz; Czerwiński, A.; Ratajczak, J.; Kątcki, J.; Marona, Ł.; Czernecki, R.; Leszczyński, M.; Perlin, P.

doi:10.1111/j.1365-2818.2009.03285.x

Journal of Microscopy

2009

DOI: 10.1111/j.1365-2818.2009.03285.x

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Mariusz Płuska

A. Czerwiński

J. Ratajczak

et al.

Abstract: Summary Cathodoluminescence (CL) studies are widely applied in semi‐conductor science and technology. However, for structures with a p‐n junction the CL spatial distribution can be strongly affected by internal current flows of the electron beam induced current generated within the structure. This influence is the investigated in application to CL studies of degradation in aged laser diodes with InGaN multiquantum wells.

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Cited by 3 publications

References 15 publications

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Detrimental nonlocality in luminescence measurements

Płuska

Czerwiński

2017

Journal of Applied Physics

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Luminescence studies are used to investigate the local properties of various light-emitting materials. A critical issue of these studies is presented that the signals often lack all advantages of luminescence-studies of high locality, and may originate from an extended spatial region of even a few millimeters in size or the whole sample, i.e., places other than intended for investigation. This is a key problem for research and development in photonics. Due to this nonlocality, information indicating defects, irregularities, nonuniformities and inhomogeneities is lost. The issue refers to typical structures with a strong built-in electric field. Such fields exist intentionally in most photonic structures and occur unintentionally in many other materials investigated by applied physics. We reveal [using test samples prepared with focused ion beam (FIB) on an AlGaAs/GaAs laser heterostructure with an InGaAs quantum well (QW)] that nonlocality increases at low temperatures. This is contrary to the widely expected outcome, as low-temperature luminescence measurements are usually assumed to be free from disturbances. We explain many effects observed due to nonlocality in luminescence studies and prove that separation of the investigated area by focused ion beam milling is a practical solution enabling truly local luminescence measurements. All conclusions drawn using the example of cathodoluminescence are useful for other luminescence techniques.

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Detrimental nonlocality in luminescence measurements

Płuska

Czerwiński

2017

Journal of Applied Physics

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Elevated-temperature luminescence measurements to improve spatial resolution

Płuska

Czerwiński

2018

AIP Advances

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Various branches of applied physics use luminescence based methods to investigate light-emitting specimens with high spatial resolution. A key problem is that luminescence signals lack all the advantages of high locality (i.e. of high spatial resolution) when structures with strong built-in electric field are measured. Such fields exist intentionally in most photonic structures, and occur unintentionally in many other materials. In this case, as a result of beam-induced current generation and its outflow, information that indicates irregularities, nonuniformities and inhomogeneities, such as defects, is lost. We show that to avoid nonlocality and enable truly local luminescence measurements, an elevated measurement temperature as high as 350 K (or even higher) is, perhaps surprisingly, advantageous. This is in contrast to a widely used approach, where cryogenic temperatures, or at least room temperature, are recommended. The elevated temperature of a specimen, together with the current outflow being limited by focused ion beam (FIB) milling, is shown to improve the spatial resolution of luminescence measurements greatly. All conclusions drawn using the example of cathodoluminescence are useful for other luminescence techniques.

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Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures

et al. 2011

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Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence spectrum, map the optical activity and reveal defects in semiconductor structures. It is commonly recognized that the CL signal represents the local properties of the structure region excited by the electron beam. The present investigations show that if the structure under study contains regions with a strong electric field (e.g. p-n junction), the CL signal may much depend on phenomena far from the excitation region. The range of CL-results distortion extends from negligible changes to completely wrong output. It depends on various parameters described in the paper. The CL results obtained for AlGaAs/ GaAs laser heterostructures with InGaAs quantum well are presented.

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Cited by 3 publications

References 15 publications

Detrimental nonlocality in luminescence measurements

Detrimental nonlocality in luminescence measurements

Elevated-temperature luminescence measurements to improve spatial resolution

Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Cited by 3 publications

References 15 publications

Detrimental nonlocality in luminescence measurements

Detrimental nonlocality in luminescence measurements

Elevated-temperature luminescence measurements to improve spatial resolution

Electron Microscopy Studies of Non-Local Effects&rsquo; Impact on Cathodoluminescence of Semiconductor Laser Structures

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Product

Resources

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Electron Microscopy Studies of Non-Local Effects’ Impact on Cathodoluminescence of Semiconductor Laser Structures