Fabrication and properties of CuInSe2/AgInSe2/CdS double heterojunction cascade solar cells

Абдуллаев, М. А.; Alhasov, A. B.; Magomedova, D. Kh.

doi:10.1134/s0020168514030017

Inorg Mater

2014

DOI: 10.1134/s0020168514030017

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Fabrication and properties of CuInSe2/AgInSe2/CdS double heterojunction cascade solar cells

М. А. Абдуллаев

A. B. Alhasov

D. Kh. Magomedova

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Cited by 10 publications

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“…By the hot-probe method, we found that our AgInSe 2 chalcopyrite films are p-type semiconductors, thus making them suitable as absorber material for heterojunction solar cells. Recently, it has been reported for CuInSe 2 /AgInSe 2 /CdS double heterojunction Cascade Solar Cells an efficiency of about 10.7 %[27].…”

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AgInSe2 Thin Films Prepared by Electrodeposition Process

Aouaj¹

2015

IJMSA

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In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO 3 , 6x10-2 M InCl 3 and 3x10-2 M of H 2 SeO 3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between-0.3 V and-1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films' compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe 2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe 2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.

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confidence: 99%

AgInSe2 Thin Films Prepared by Electrodeposition Process

Aouaj¹

2015

IJMSA

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Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition

2017

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Optical constants and critical point energies of (AgInSe2)0.75–(In2Se3)0.25 single crystals

Isik

Nasser

Guseinov

et al. 2020

J Mater Sci: Mater Electron

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Fabrication and properties of CuInSe2/AgInSe2/CdS double heterojunction cascade solar cells

Cited by 10 publications

References 6 publications

AgInSe2 Thin Films Prepared by Electrodeposition Process

AgInSe2 Thin Films Prepared by Electrodeposition Process

Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition

Optical constants and critical point energies of (AgInSe2)0.75–(In2Se3)0.25 single crystals

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