Optical constants and critical point energies of (AgInSe2)0.75–(In2Se3)0.25 single crystals

Isik, M.; Nasser, Hisham; Guseinov, A. G.; Gasanly, Nizami

doi:10.1007/s10854-020-03026-1

Cited by 3 publications

(2 citation statements)

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“…[ 14–16 ] This material can be used in bio‐imaging, biosensors, and thermoelectric materials. [ 17 ] The qualities which states its applicability in the solar‐cell field are that it spectacles a smaller bandgap as well as higher optical absorption coefficient and good radiation stability. [ 18 ] The estimated direct bandgap of AgInSe 2 is reported to be 1.2 eV.…”

Section: Introductionmentioning

confidence: 99%

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Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

2023

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Herein, AgInSe2 absorber–based n‐In2S3/p‐AgInSe2/p+‐molybdenum disulfide heterojunction thin‐film solar device is numerically explored with the help of SCAPS‐1D software. The major focus of this numerical study is to inquire the performances of the purported solar cell and hence unearth the highest efficiency of the AgInSe2 (AISe) solar cell. Herein, the functions of different parameters like thicknesses, doping and defect density, working temperature, series, and shunt resistances are investigated. The recommended solar cell parades the short‐circuit current density, open circuit voltage, fill factor, and efficiency of 39.11 mA cm−2, 1.10 V, 82.26%, and 35.44%, respectively. It is noteworthy that the efficiency is comparatively higher than the previously reported AISe‐based solar cell. The AgInSe2 semiconductor is easy to fabricate as well as has good electrical properties, therefore this proposed solar cell is highly efficient and cost effective.

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Section: Introductionmentioning

confidence: 99%

“…[ 18 ] The estimated direct bandgap of AgInSe 2 is reported to be 1.2 eV. [ 17 ] The optical absorption coefficient of AgInSe 2 is above 5 × 10 4 cm −1 . [ 19 ] Moreover, the surface recombination velocity of this material is low and the mobility and carrier life time is acceptable.…”

Section: Introductionmentioning

confidence: 99%

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

2023

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Theoretical insights toward a highly responsive AgInSe₂ photodetector

Ebon,

Abir,

Pathak

et al. 2024

Applied Research

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This treatise showcases the design as well as modeling about a photodetector (PD) based on AgInSe2 (AISe), a direct bandgap chalcopyrite with a bandgap of 1.19 eV. The PD exhibits outstanding optical and electronic characteristics, showcasing remarkable performance. The PD has been systematically investigated by varying the width, carrier density, and defect densities of specific layers, as well as the interface defect density of specific interfaces. Various layers are optimized to enhance the overall performance of the PD and the impact of different device resistances is analyzed. The photocurrent (JSC) and voltage (VOC) of the heterostructure photodetector are determined to be 38.60 mA/cm2 and 1.0 V, in turn. The maximum responsivity (R) and detectivity (D*) are identified as 0.70 A/W and 4.60×1016 Jones, respectively at a wavelength of 940 nm. The spectral response exhibits significantly higher values in the range of 800 to 1000 nm, indicating the device's capability to detect near‐infrared (NIR) light. This research provides valuable insights for the manufacturing of AISe material‐based photodetectors with enhanced performance.This article is protected by copyright. All rights reserved.

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Properties of ternary quantum dots

Oluwafemi

Sakho

Parani

et al. 2021

Ternary Quantum Dots

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Optical constants and critical point energies of (AgInSe2)0.75–(In2Se3)0.25 single crystals

Cited by 3 publications

References 29 publications

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Theoretical insights toward a highly responsive AgInSe₂ photodetector

Properties of ternary quantum dots

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Optical constants and critical point energies of (AgInSe2)0.75–(In2Se3)0.25 single crystals

Cited by 3 publications

References 29 publications

Design of an Efficient AgInSe2Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Design of an Efficient AgInSe2Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Theoretical insights toward a highly responsive AgInSe2 photodetector

Properties of ternary quantum dots

Contact Info

Product

Resources

About

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Design of an Efficient AgInSe₂Chalcopyrite‐Based Heterojunction Thin‐Film Solar Cell

Theoretical insights toward a highly responsive AgInSe₂ photodetector